1N5817-T3

The 1N5817-T3 is a 1.0A schottky barrier rectifier

Features of the 1N5817-T3 are:(1)schottky barrier chip;(2)guard ring die construction for transient protection;(3)high current capability;(4)low power loss,high efficiency;(5)high surge current capability;(6)for use in low voltage,high frequency inverters,free wheeling and polarity protection applications.

The absolute maximum ratings of the 1N5817-T3 can be summarized as:(1)peak repetitive reverse voltage,V_RRM:20V;(2)working peak reverse voltage,V_RWM:20V;(3)DC blocking voltage,V_R:20V;(4)RMS reverse voltage,V_R(RMS):14V;(5)avaerage rectified output current(note1) of the 1N5817-T3 @T;L=90,I_O:1.0A;(6)non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load(JEDEC method),I_FSM:25A;(7)forward voltage,V_FM:@I_F=1.0A..0.450V@I_F=3.0A..0.750V;(8)peak reverse current at rated DC blocking voltage,I_RM:@T_A=25..1.0mA@T_A=100...10mA;(9)typical junction capacitance(note2),C_j:110pF;(10)typical thermal resistance junction to lead(note1),R_jl:60K/W;(11)operating and storage temperature range of the 1N5817-T3,T_j,T_STG:-65 to +150.NOTE:1.valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.2.measured at 1.0MHz and applied reverse voltage of 4.0V D.C.

If you want to know more information such as the electrical characteristics about the 1N5817-T3, please download the datasheet in www.seekic.com or www.chinaicmart.com .