1N5806

DIODE 150V 2.5A 25NS AXIAL

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SeekIC No. : 003428136 Detail

1N5806: DIODE 150V 2.5A 25NS AXIAL

floor Price/Ceiling Price

US $ 3.29~3.29 / Piece | Get Latest Price
Part Number:
1N5806
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~5000
  • Unit Price
  • $3.29
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Quick Details

Series: - Frequency : 24 GHz
Manufacturer: Microsemi Commercial Components Group Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2.5A
Current - Average Rectified (Io) (per Diode): - Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 150V Capacitance @ Vr, F: -
Diode Configuration: - Mounting Type: Through Hole
Package / Case: A, Axial Supplier Device Package: A-PAK    

Description

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: -
Reverse Recovery Time (trr): 25ns
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Voltage - DC Reverse (Vr) (Max): 150V
Current - Reverse Leakage @ Vr: 1µA @ 150V
Current - Average Rectified (Io): 2.5A
Manufacturer: Microsemi Commercial Components Group
Package / Case: A, Axial
Supplier Device Package: A-PAK


Features:

• Popular JEDEC registered 1N5802 to 1N5806 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal "Category I" Metallurgical bonds
• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-19500/477
• Surface mount equivalents also available in a square end-cap MELF configuration with "US" suffix (see separate data sheet for 1N5802US thru1N5806US)





Application

• Ultrafast recovery 2.5 Amp rectifier series 50 to 150V
• Military and other high-reliability applications
• Switching power supplies or other applications requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power capability
• Inherently radiation hard as described in Microsemi MicroNote 050





Pinout

• Junction Temperature: -65oC to +175oC
• Storage Temperature: -65oC to +175oC
• Average Rectified Forward Current (IO): 2.5 A @ TL = 75ºC
• Thermal Resistance: 36 ºC/W junction to lead (L=.375 in)
• Thermal Impedance: 4.5oC/W @ 10 ms heating time
• Forward Surge Current: 35 Amps @ 8.3 ms half-sine
• Capacitance: 25 pF @ VR = 10 Volts, f = 1 MHz
• Solder temperature: 260ºC for 10 s (maximum)





Description

This "ultrafast recovery" rectifier diode series is military qualified to the 1N5806 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal "Category I "metallurgical bond. They are also available in surface-mount packages (see separate data sheet for the 1N5806). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast in both through-hole and surface-mount packages.




Parameters:

Technical/Catalog Information1N5806
VendorMicrosemi
CategoryDiscrete Semiconductor Products
Diode Type Standard
Voltage - DC Reverse (Vr) (Max)150V
Current - Average Rectified (Io)2.5A
Voltage - Forward (Vf) (Max) @ If875mV @ 1A
Reverse Recovery Time (trr)25ns
Current - Reverse Leakage @ Vr1A @ 150V
SpeedFast Recovery =< 500ns, > 200mA (Io)
Mounting TypeThrough Hole, Axial
Package / CaseAxial
PackagingTape & Reel (TR)
Capacitance @ Vr, F-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 1N5806
1N5806
1N5806TR ND
1N5806TRND
1N5806TR



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