Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: -
Reverse Recovery Time (trr): 25ns
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Voltage - DC Reverse (Vr) (Max): 150V
Current - Reverse Leakage @ Vr: 1µA @ 150V
Current - Average Rectified (Io): 2.5A
Manufacturer: Microsemi Commercial Components Group
Package / Case: A, Axial
Supplier Device Package: A-PAK
Features: • Popular JEDEC registered 1N5802 to 1N5806 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal "Category I" Metallurgical bonds
• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-19500/477
• Surface mount equivalents also available in a square end-cap MELF configuration with "US" suffix (see separate data sheet for 1N5802US thru1N5806US) Application• Ultrafast recovery 2.5 Amp rectifier series 50 to 150V
• Military and other high-reliability applications
• Switching power supplies or other applications requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power capability
• Inherently radiation hard as described in Microsemi MicroNote 050 Pinout• Junction Temperature: -65oC to +175oC
• Storage Temperature: -65oC to +175oC
• Average Rectified Forward Current (IO): 2.5 A @ TL = 75ºC
• Thermal Resistance: 36 ºC/W junction to lead (L=.375 in)
• Thermal Impedance: 4.5oC/W @ 10 ms heating time
• Forward Surge Current: 35 Amps @ 8.3 ms half-sine
• Capacitance: 25 pF @ VR = 10 Volts, f = 1 MHz
• Solder temperature: 260ºC for 10 s (maximum) DescriptionThis "ultrafast recovery" rectifier diode series is military qualified to the 1N5806 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal "Category I "metallurgical bond. They are also available in surface-mount packages (see separate data sheet for the 1N5806). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast in both through-hole and surface-mount packages.
Parameters: Technical/Catalog Information | 1N5806 |
Vendor | Microsemi |
Category | Discrete Semiconductor Products |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 150V |
Current - Average Rectified (Io) | 2.5A |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 1A |
Reverse Recovery Time (trr) | 25ns |
Current - Reverse Leakage @ Vr | 1A @ 150V |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mounting Type | Through Hole, Axial |
Package / Case | Axial |
Packaging | Tape & Reel (TR) |
Capacitance @ Vr, F | - |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 1N5806 1N5806 1N5806TR ND 1N5806TRND 1N5806TR |