Features: SpecificationsDescription The 1N5550 THROUGH 1N5554 Here is the Scope about the 1N5550 THROUGH 1N5554. This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. Four levels of product assurance are provided for each encapsulated device typ...
1N5550 THROUGH 1N5554: Features: SpecificationsDescription The 1N5550 THROUGH 1N5554 Here is the Scope about the 1N5550 THROUGH 1N5554. This specification covers the performance requirements for silicon, general purpose, ...
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The 1N5550 THROUGH 1N5554
Here is the Scope about the 1N5550 THROUGH 1N5554. This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.
The Physical dimensions of the 1N5550 THROUGH 1N5554 are: See figure 1 (similar to DO-41) for 1N5550 through 1N5554.
The absolute maximum ratings of the 1N5550 THROUGH 1N5554 are underneath. Unless otherwise specified, Tc = +25°C and ratings apply to all case outlines. Operating junction temperature is from -65 to+200°C, and Storage temperature is from -65to+200°C. (1) Derate linearly at 41.6 mA/°C above Tl = +55°C at L = .375 inch (9.53 mm). (2) An IO of up to 6 A dc is allowable provided that appropriate heat sinking or forced air cooling maintains the maximum junction temperature at or below +200°C as proven by the junction temperature rise test (see 6.5). Barometric pressure reduced: 1N5550, 1N5551, 1N5552 - 8 mmHg (100,000 feet). 1N5553, 1N5554 - 33 mmHg (70,000 feet). (3) Does not apply to surface mount devices. (4) Derate linearly at 25 mA/°C above TA = +55°C.
Here are the six notes of the 1N5550 THROUGH 1N5554. NOTES: 1. Dimensions are in inches.2. Millimeters are given for general information only. 3. Dimensions BL and BD include all components of the diode periphery except the sections of leads over which the diameter is controlled. 4. Dimension BD shall be measured at the largest diameter. 5. Dimension LU shall include the sections of the lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.
FIGURE 1.Physical dimensions of diode 1N5550 THROUGH 1N5554, (similar to DO-41).
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