19MT050XFAPBF

MOSFET N-Chan 500V 31 Amp

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SeekIC No. : 00160160 Detail

19MT050XFAPBF: MOSFET N-Chan 500V 31 Amp

floor Price/Ceiling Price

Part Number:
19MT050XFAPBF
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 31 A
Resistance Drain-Source RDS (on) : 0.25 Ohms Configuration : Quad
Maximum Operating Temperature : + 150 C Mounting Style : Screw
Package / Case : MTP Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 31 A
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Resistance Drain-Source RDS (on) : 0.25 Ohms
Configuration : Quad
Mounting Style : Screw
Package / Case : MTP


Description

The 19MT050XFAPbF is designed as one kind of "Full Bridge" FREDFET MTPs (power MOSFET) with current of 31A.

19MT050XFAPbF has seven features. (1)Low on-resistance. (2)High performance optimized built-in fast recovery diodes. (3)Fully characterized capacitance and avalanche voltage and current. (4)Al2O3 DBC. (5)Very low stray inductance design for high speed operation. (6)UL approved file E78996. (7)Compliant to RoHS directive 2002/95/EC. Those are all the main features.

Some absolute maximum ratings of 19MT050XFAPbF have been concluded into several points as follow. (1)Its continuous drain current at Vgs 10V would be 31A at Tc=25°C and would be 19A at Tc=100°C. (2)Its pulsed drain current would be 124A. (3)Its maximum power dissipation would be 1140W at Tc=25°C and would be 456W at Tc=100°C. (4)Its gate to source voltage would be +/-30V. (5)Its RMS isolation voltage would be 2500V. (6)Its peak diode recovery dV/dt would be 15V/ns. (7)Its operating junction temperature range would be from -55°C to 150°C. (8)Its operating storage temperature range would be from -55°C to 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some static electrical characteristics of 19MT050XFAPbF are concluded as follow. (1)Its drain to source breakdown voltage would be min 500V. (2)Its temperature coefficient of breakdown voltage would be typ 0.48V/°C. (3)Its gate threshold voltage would be min 3.0V and max 6.0V. (4)Its gate to source forward leakage would be max 150nA. (5)Its gate to source reverse leakage would be max -150nA. (6)Its static drain to source on-resistance would be typ 0.19ohms and max 0.22ohms at Vgs=10V and Id=19A. At present we have not got so much information about this IC and we would try hard to get more information about 19MT050XFAPbF. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




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