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19MT050XF

HEX/MOS N-CHAN 500V 31A MTP

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SeekIC No. : 004130665 Detail

19MT050XF: HEX/MOS N-CHAN 500V 31A MTP

19MT050XF Data Sheet

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Part Number:
19MT050XF
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Series: HEXFET® Manufacturer: Vishay Semiconductors
FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard
Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25° C: 31A
Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 6V @ 250µA
Gate Charge (Qg) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) @ Vds: 7210pF @ 25V
Power - Max: 1140W Package / Case : PGBA-516
Mounting Type: Chassis Mount Package / Case: 16-MTP
Supplier Device Package: 16-MTP    

Description

Manufacturer: Vishay Semiconductors
FET Feature: Standard
Mounting Type: Chassis Mount
Drain to Source Voltage (Vdss): 500V
FET Type: 4 N-Channel (H-Bridge)
Packaging: Bulk
Current - Continuous Drain (Id) @ 25° C: 31A
Vgs(th) (Max) @ Id: 6V @ 250µA
Gate Charge (Qg) @ Vgs: 160nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds: 7210pF @ 25V
Power - Max: 1140W
Package / Case: 16-MTP
Supplier Device Package: 16-MTP


Features:

LOW on-resistance
high performance optimised built-in fast recovery diodes
fully characterized capaciltance and avalanche voltage and corrent
aluminum nitride dbc 
very low stray inductance design for high speed operation




Specifications

Connection Diagram


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