1517-250M Selling Leads, Price trend, 1517-250M DataSheet download, circuit diagram from SeekIC.com

SpecificationsMaximum Power DissipationDevice Dissipation @251 .......700 WMaximum Voltage and CurrentCollector to Base Voltage (BVCES) ....70 VEmitter to Base Voltage (BVEBO) .....3 VCollector Current (IC) ..........20 AMaximum TemperaturesStorage Temperature .....-65 to +200 Operating Junction T...

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SeekIC No. : 004210271 Detail

1517-250M: SpecificationsMaximum Power DissipationDevice Dissipation @251 .......700 WMaximum Voltage and CurrentCollector to Base Voltage (BVCES) ....70 VEmitter to Base Voltage (BVEBO) .....3 VCollector Curr...

1517-250M Data Sheet

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Part Number:: 1517-250M
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

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15 Days

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Upload time: 2024/12/21

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Product Details

Description

Specifications

Maximum Power Dissipation
Device Dissipation @25¹ .......700 W
Maximum Voltage and Current
Collector to Base Voltage (BV_CES) ....70 V
Emitter to Base Voltage (BV_EBO) .....3 V
Collector Current (I_C) ..........20 A
Maximum Temperatures
Storage Temperature .....-65 to +200
Operating Junction Temperature +200

Description

The 1517-250M is an internally matched, COMMON BASE transistor capable of providing 250 Watts of pulsed RF output power at 200 microseconds pulse width, 10% duty factor across the band 1480 to 1650 MHz. This hermetically solder-sealed transistor is specifically designed for upper L-Band radar applications. The 1517-250M utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness.

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1517-250M

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