1517-20M Selling Leads, Price trend, 1517-20M DataSheet download, circuit diagram from SeekIC.com

SpecificationsMaximum Power DissipationDevice Dissipation @251 ...................................175 WMaximum Voltage and CurrentCollector to Base Voltage (BVCES) ..........................70 VEmitter to Base Voltage (BVEBO) ..............................3 VCollector Current (IC) ...................

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SeekIC No. : 004210270 Detail

1517-20M: SpecificationsMaximum Power DissipationDevice Dissipation @251 ...................................175 WMaximum Voltage and CurrentCollector to Base Voltage (BVCES) ..........................70 VEmit...

1517-20M Data Sheet

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Part Number:: 1517-20M
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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Product Details

Description

Specifications

Maximum Power Dissipation
Device Dissipation @25¹ ...................................175 W
Maximum Voltage and Current
Collector to Base Voltage (BVCES) ..........................70 V
Emitter to Base Voltage (BVEBO) ..............................3 V
Collector Current (I_C) ................................................3 A
Maximum Temperatures
Storage Temperature ..............................-65 to +200
Operating Junction Temperature ........................+200

Description

The 1517-20M is an internally matched, COMMON BASE transistor capable of providing 20 Watts of pulsed RF output power at 200 microseconds pulse width, 10% duty factor across the band 1480 to 1650 MHz. This hermetically soldersealed transistor is specifically designed for upper L-Band radar applications. The 1517-20M utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness.

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1517-20M

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