12TTS08S

Product :
Peak Reverse Voltage :
Forward Continuous Current :
Max Surge Current :
Configuration :
Recovery Time :
Forward Voltage Drop :
Maximum Reverse Leakage Current :
Maximum Power Dissipation :
Package / Case : D2PAK
Packaging : Tube
Operating Temperature Range : - 40 C to 125 C


Specifications

PARAMETER	SYMBOL	TEST CONDITIONS		VALUES	UNITS
Maximum average on-state current Maximum RMS on-state current	IT(AV) IT(TRMS)	TC = 108 , 180° conduction, half sine wave		8 12.5	A
Maximum peak, one-cycle, non-repetitive surge current	ITSM	10 ms sine pulse, rated VRRM applied, TJ = 125 10 ms sine pulse, no voltage reapplied, TJ = 125		120 140
Maximum I2t for fusing	I2t	10 ms sine pulse, rated VRRM applied, TJ = 125 10 ms sine pulse, no voltage reapplied, TJ = 125		72 100	A2s
Maximum I2t for fusing Maximum on-state voltage drop	I2t VTM	t = 0.1 to 10 ms, no voltage reapplied 10 A, TJ = 25		1000 1.2	A2s V
On-state slope resistance Threshold voltage	rt VT(TO)	TJ = 125		16.2 0.87	m V
Maximum reverse and direct leakage current	IRM/IDM	TJ = 25 TJ = 125	VR = Rated VRRM/VDRM	0.05 1.0	mA
Holding current Maximum latching current	IH IL	Anode supply = 6 V, resistive load, initial IT = 1A Anode supply = 6 V, resistive load		30
				50
Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current	dV/dt dI/dt	TJ = 25		150 100	V/s A/s

Description

The 12TTS08S High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 junction temperature.

Typical applications are in input rectification and crow-bar (soft start) and 12TTS08S is designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.

The 12TTS08S has been designed and qualified for industrial level.