12TTS08PBF

SCR PHSE CTRL 800V 12.5A TO220AC

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SeekIC No. : 003435392 Detail

12TTS08PBF: SCR PHSE CTRL 800V 12.5A TO220AC

floor Price/Ceiling Price

US $ .73~.73 / Piece | Get Latest Price
Part Number:
12TTS08PBF
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1000
  • Unit Price
  • $.73
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: - Manufacturer: Vishay Semiconductors
SCR Type: Standard Recovery Voltage - Off State: 800V
Voltage - Gate Trigger (Vgt) (Max): 1V Voltage - On State (Vtm) (Max): 1.2V
Maximum Operating Frequency : 2.5 GHz Current - On State (It (AV)) (Max): 8A
Current - On State (It (RMS)) (Max): 12.5A Current - Gate Trigger (Igt) (Max): 15mA
Current - Hold (Ih) (Max): 30mA Current - Off State (Max): 50µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A @ 50Hz Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole Package / Case: TO-220-3
Supplier Device Package: TO-220AB    

Description

Series: -
Voltage - Off State: 800V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
SCR Type: Standard Recovery
Current - Gate Trigger (Igt) (Max): 15mA
Current - Hold (Ih) (Max): 30mA
Manufacturer: Vishay Semiconductors
Voltage - Gate Trigger (Vgt) (Max): 1V
Current - Off State (Max): 50µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A @ 50Hz
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Packaging: Tube
Current - On State (It (AV)) (Max): 8A
Current - On State (It (RMS)) (Max): 12.5A
Voltage - On State (Vtm) (Max): 1.2V


Specifications

Parameters
Values
Units
Conditions
IT(AV) Max. Average On-state Current
8
A
@ TC = 108, 180° conduction half sine wave
IT(RMS) Max. RMS On-state Current
125
 
ITSM Max. Peak One Cycle Non-Repetitive Surge Current
120
A
10ms Sine pulse, rated VRRM applied, TJ = 125
140
10ms Sine pulse, no voltage reapplied, TJ = 125
I2t Max. I2t for fusing
72
A2s
10ms Sine pulse, rated VRRM applied, TJ = 125
100
10ms Sine pulse, no voltage reapplied, TJ = 125
I2t Max. I2t for fusing
1000
A2s
t = 0.1 to 10ms, no voltage reapplied, TJ = 125
VTM Max. On-state Voltage Drop
1.2
V
@ 8A, TJ = 25
rt On-state slope resistance
16.2
m
TJ = 125
VT(TO) Threshold Voltage
0.87
V
RM/IDMMax.Reverse and Direct Leakage Current
0.05
mA
TJ = 25 VR = rated VRRM/ VDRM
1.0
TJ = 125
IH Typ. Holding Current
30
mA
Anode Supply = 6V, Resistive load, Initial IT=1A
IL Max. Latching Current
50
mA
Anode Supply = 6V, Resistive load
dv/dt Max. rate of rise of off-state Voltage
150
TJ = 25
di/dt Max. rate of rise of turned-on Current
100
 



Description

The 12TTS08PbF of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 junction temperature.

Typical applications are in input rectification and crow-bar (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines.




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