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Electrostatic Discharge Voltage pins relative to GND
Human body model
XC3S50
-
±1500
V
Other
-
±2000
V
Charged device model
-
±500
V
Machine model
-
±200
V
TJ
Junction temperature
-
125
TSOL
Soldering temperature
-
220
TSTG
Storage temperature
-65
150
XC3S1000 Features
• Low-cost, high-performance logic solution for high-volume, consumer-oriented applications - Densities up to 74,880 logic cells • SelectIO™ signaling - Up to 784 I/O pins - 622 Mb/s data transfer rate per I/O - 18 single-ended signal standards - 8 differential I/O standards including LVDS, RSDS - Termination by Digitally Controlled Impedance - Signal swing ranging from 1.14V to 3.45V - Double Data Rate (DDR) support - DDR, DDR2 SDRAM support up to 333 Mbps • Logic resources - Abundant logic cells with shift register capability - Wide, fast multiplexers - Fast look-ahead carry logic - Dedicated 18 x 18 multipliers - JTAG logic compatible with IEEE 1149.1/1532 • SelectRAM™ hierarchical memory - Up to 1,872 Kbits of total block RAM - Up to 520 Kbits of total distributed RAM • Digital Clock Manager (up to four DCMs) - Clock skew elimination - Frequency synthesis - High resolution phase shifting • Eight global clock lines and abundant routing • Fully supported by Xilinx ISE development system - Synthesis, mapping, placement and routing • MicroBlaze™ processor, PCI, and other cores • Pb-free packaging options • Low-power Spartan-3L Family and Automotive Spartan-3 XA Family variants