V12P10, V12P10-M3/86A, V12P12 Selling Leads, Datasheet
MFG:Vishay Package Cooled:TO-277A D/C:2010+
V12P10, V12P10-M3/86A, V12P12 Datasheet download
Part Number: V12P10
MFG: Vishay
Package Cooled: TO-277A
D/C: 2010+
V12P10, V12P10-M3/86A, V12P12
- Table of contents:
Info of V12P10
Info of V12P10-M3/86A
Info of V12P12
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About V120CH8
PDF/DataSheet Download
Datasheet: V120CH8
File Size: 308942 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
About V120CH8
PDF/DataSheet Download
Datasheet: V120CH8
File Size: 308942 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
About V120CH8
PDF/DataSheet Download
Datasheet: V120CH8
File Size: 308942 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
V12P10 General Description
V12P10 datasheet
V12P10 Maximum Ratings
|
PARAMETER |
SYMBOL |
V12P10 |
UNIT |
|
Device marking code |
V1210 |
||
|
Maximum repetitive peak reverse voltage |
VRRM |
100 |
V |
|
Maximum average forward rectified current (Fig. 1) |
IF(AV) |
12 |
A |
|
Peak forward surge current 10 ms single half sine-wave superimposed on rated load |
IFSM |
200 |
A |
|
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 |
EAS |
100 |
mJ |
|
Operating junction and storage temperature range |
TJ, TSTG |
- 40 to + 150 |
V12P10 Features
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Halogen-free
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Halogen-free
V12P12 General Description
V12P12 datasheet
V12P12 Maximum Ratings
|
PARAMETER |
SYMBOL |
V12P12 |
UNIT |
|
Device marking code |
V1212 |
||
|
Maximum repetitive peak reverse voltage |
VRRM |
120 |
V |
|
Maximum average forward rectified current (Fig. 1) |
IF(AV) |
12 |
A |
|
Peak forward surge current 10 ms single half sine-wave superimposed on rated load |
IFSM |
150 |
A |
|
Non-repetitive avalanche energy at IAS = 2.0 A, L = 50 mH, TJ = 25 |
EAS |
100 |
mJ |
|
Operating junction and storage temperature range |
TJ, TSTG |
- 40 to + 1501 |
V12P12 Features
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Halogen-free
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Halogen-free
V12P12 Typical Application
For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters and polarity protection pplications.
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