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The PC8128TB, PC8151TB and PC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50 wideband matched IC. These low current amplifiers operate on 3.0 V.
These ICs are manufactured using NEC's 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.
UPC8151TB Maximum Ratings
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VCC
TA = +25, Pin 4, Pin 6
3.6
V
Circuit Current
ICC
TA = +25
15
mA
Power Dissipation
PD
Mounted on double-sided copper clad 50 * 50 * 1.6 mm epoxy glass PWB, TA = +85
270
mW
Operating Ambient Temperature
TA
−40 to +85
Storage Temperature
Tstg
−55 to +150
Input Power
Pin
TA = +25
+5
dBm
UPC8151TB Features
• Supply voltage : VCC = 2.4 to 3.3 V • Low current consumption : PC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V PC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V PC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V • High efficiency : PC8128TB ; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz PC8151TB ; PO(1 dB) = +2.5 dBm TYP. @f = 1 GHz PC8152TB ; PO(1 dB) = −4.5 dBm TYP. @f = 1 GHz • Power gain : PC8128TB, 8151TB ; GP = 12.5 dB TYP. @f = 1 GHz PC8152TB ; GP = 23 dB TYP. @f = 1 GHz • Excellent isolation : PC8128TB ; ISL = 39 dB TYP. @f = 1 GHz : PC8151TB ; ISL = 38 dB TYP. @f = 1 GHz : PC8152TB ; ISL = 40 dB TYP. @f = 1 GHz • Operating frequency : 100 to 1 900 MHz (Output port LC matching) • High-density surface mounting : 6-pin super minimold package (2.0 * 1.25 * 0.9 mm) • Light weight : 7 mg (Standard value)
UPC8151TB Typical Application
• Buffer Amplifiers on 800 to 1 900 MHz cellular or cordless telephones