UPA895TS, UPA895TS-T3, UPA901TU Selling Leads, Datasheet
MFG:NEC Package Cooled:N/A D/C:09+
UPA895TS, UPA895TS-T3, UPA901TU Datasheet download
Part Number: UPA895TS
MFG: NEC
Package Cooled: N/A
D/C: 09+
MFG:NEC Package Cooled:N/A D/C:09+
UPA895TS, UPA895TS-T3, UPA901TU Datasheet download
MFG: NEC
Package Cooled: N/A
D/C: 09+
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PDF/DataSheet Download
Datasheet: UPA0J821MPD
File Size: 91743 KB
Manufacturer: NICHICON [Nichicon corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: UPA0J821MPD
File Size: 91743 KB
Manufacturer: NICHICON [Nichicon corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: UPA901TU-A
File Size: 579450 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
NEC's UPA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other
5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency, high gain, low power consumption.
NEC's UPA901TU is packaged in surface mount 8-pin leadless minimold plastic package.
This device is fabricated with our SiGe HBT process UHS2- HV technology.
Parameter |
Symbol |
Limits |
Unit |
Collector-base voltage |
VCBO |
15 |
V |
Collector-emitter voltage |
VCEO |
4.5 |
V |
Emitter-base voltage |
VEBO |
2 |
V |
Collector Current of Q1 |
IC1 |
75 |
mA |
Collector Current of Q2 |
IC2 |
250 |
mA |
Bias Current |
IBIAS |
25 |
mA |
Total Power Dissipation |
Ptot Note |
410 |
mW |
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
-65 to +150 |
°C |
Operating Ambient Temperature |
TA |
−40 to +85 |
°C |