UPA861TD, UPA863TD, UPA863TD-T3 Selling Leads, Datasheet
MFG:NEC Package Cooled:N/A D/C:09+
UPA861TD, UPA863TD, UPA863TD-T3 Datasheet download
Part Number: UPA861TD
MFG: NEC
Package Cooled: N/A
D/C: 09+
MFG:NEC Package Cooled:N/A D/C:09+
UPA861TD, UPA863TD, UPA863TD-T3 Datasheet download
MFG: NEC
Package Cooled: N/A
D/C: 09+
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PDF/DataSheet Download
Datasheet: UPA861TD
File Size: 132511 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: UPA0J821MPD
File Size: 91743 KB
Manufacturer: NICHICON [Nichicon corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: UPA0J821MPD
File Size: 91743 KB
Manufacturer: NICHICON [Nichicon corporation]
Download : Click here to Download
NEC's UPA861TD contains one NE894 and one NE687 NPN high frequency silicon bipolar chip. The NE894 is an excellent oscillator chip, featuring high fT and low current, low voltage operation. The NE687 is an excellent buffer transistor, featuring low noise and high gain. NEC's new ultra small TD package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications.
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS | |
Q1 |
Q2 | |||
VCBO |
Collector to Base Voltage |
V |
5 |
9 |
VCEO |
Collector to Emitter Voltage |
V |
3 |
3 |
VEBO |
Emitter to Base Voltage |
V |
2 |
1.5 |
IC |
Collector Current |
mA |
30 |
35 |
PT |
Total Power Dissipation1 |
mW |
90 |
105 |
195 Total | ||||
TJ |
Junction Temperature |
150 |
150 | |
TSTG |
Storage Temperature |
-65 to +150 |
Note:
1. Operation in excess of any one of these parameters may
result in permanent damage.
2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB
• LOW VOLTAGE, LOW CURRENT OPERATION
• LOW CAPACITANCE FOR WIDE TUNING RANGE
• SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm
• LOW HEIGHT PROFILE: Just 0.50 mm high
• TWO DIFFERENT DIE TYPES:
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
• IDEAL FOR >3 GHz OSCILLATORS