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The UPA829TF contains two NE688 NPN high frequency ilicon bipolar chips. NEC's new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications.
UPA829TF Maximum Ratings
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
9
VCEO
Collector to Emitter Voltage
V
6
VEBO
Emitter to Base Voltage
V
2
IC
Collector Current
mA
100
PT
Total Power Dissipation 1 Die 2 Die
mW mW
110 200
TJ
Junction Temperature
150
TSTG
Storage Temperature
-65 to +150
Note: 1.Operation in excess of any one of these parameters may result in permanent damage.
UPA829TF Features
• SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 100 mA