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UPA821TC-T1 SOT463-81, UPA821TF, UPA821TF-E3

Table of contents:
Info of UPA821TC-T1 SOT463-81
Info of UPA821TF
Info of UPA821TF-E3

UPA821TC-T1 SOT463-81, UPA821TF, UPA821TF-E3 Selling Leads, Datasheet

MFG:NEC Package Cooled:SOT-363 D/C:05+

UPA821TC-T1 SOT463-81, UPA821TF, UPA821TF-E3 Picture

UPA821TC-T1 SOT463-81, UPA821TF, UPA821TF-E3 Datasheet download

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Part Number: UPA821TC-T1 SOT463-81

MFG: NEC

Package Cooled: SOT-363

D/C: 05+

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UPA821TF General Description

The UPA821TF has two built-in low-voltage transistors which are designed for low-noise amplification in the VHF to UHF band. The two die are chosen from adjacent locations on the wafer. These features combined with the pin configuration make this device ideal for balanced or mirrored applications.Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The thinner package style allows for higher density designs.

UPA821TF Maximum Ratings

SYMBOLS	PARAMETERS	UNITS	RATINGS
V_CBO	Collector to Base Voltage	V	20
V_CEO	Collector to Emitter Voltage	V	12
V_EBO	Emitter to Base Voltage	V	3
I_C	Collector Current	mA	1000
P_T	Total Power Dissipation 1 Die 2 Die2	mW mW	150 200
T_J	Junction Temperature		150
T_STG	Storage Temperature		-65 to +150

Note:
1.Operation in excess of any one of these parameters may result in permanent damage.
2.When operating both devices, the power dissipation for either device should not exceed 110 mW.

UPA821TF Features

• LOW NOISE:NF = 1.2 dB TYP at f = 1 GHz, V_CE = 3 V, lc = 7 mA
• HIGH GAIN:|S_21E|2 = 9.0 dB TYP at f = 1 GHz, V_CE = 3 V, lc = 7 mA
• SMALL PACKAGE STYLE:2 NE856 die in a 2 mm x 1.25 mm x 0.6 mm package

UPA821TF Connection Diagram

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