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NEC's UPA808T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications
UPA808T Maximum Ratings
Parameter
Symbol
Ratings
UNIT
Collector-base voltage
BVCBO
5
V
Collector-emitter voltage
BVCEO
3
V
Emitter-base voltage
BVEBO
2
V
Collector current
IC
30
mA
Power dissipation 1 Die 2 Die
PT
90 180
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
55 to +150
Note: 1.Operation in excess of any one of these parameters may result in permanent damage.
UPA808T Features
• SMALL PACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz • LOW CURRENT OPERATION