UPA1914, UPA1914TE, UPA1914TE-T1 Selling Leads, Datasheet
MFG:NEC Package Cooled:N/A D/C:07+(ROHS)
UPA1914, UPA1914TE, UPA1914TE-T1 Datasheet download
Part Number: UPA1914
MFG: NEC
Package Cooled: N/A
D/C: 07+(ROHS)
UPA1914, UPA1914TE, UPA1914TE-T1
- Table of contents:
Info of UPA1914
Info of UPA1914TE
Info of UPA1914TE-T1
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About UPA1914
PDF/DataSheet Download
Datasheet: UPA1914
File Size: 68658 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About UPA1914TE
PDF/DataSheet Download
Datasheet: UPA1914TE
File Size: 68658 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About UPA0J821MPD
PDF/DataSheet Download
Datasheet: UPA0J821MPD
File Size: 91743 KB
Manufacturer: NICHICON [Nichicon corporation]
Download : Click here to Download
UPA1914 General Description
The PA1914 is a switching device which can be driven directly by a 4 V power source.
The PA1914 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
The PA1914 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
UPA1914 Maximum Ratings
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±4.5 A
Drain Current (pulse) Note1 ID(pulse) ±18 A
Total Power Dissipation PT1 0.2 W
Total Power Dissipation Note2 PT2 2 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Notes 1. PW 10 s, Duty Cycle 1 %
2. Mounted on FR-4 Board, t £ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±4.5 A
Drain Current (pulse) Note1 ID(pulse) ±18 A
Total Power Dissipation PT1 0.2 W
Total Power Dissipation Note2 PT2 2 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Notes 1. PW 10 s, Duty Cycle 1 %
2. Mounted on FR-4 Board, t £ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
UPA1914 Features
` Can be driven by a 4 V power source
` Low on-state resistance
RDS(on)1 = 57 m MAX. (VGS = 10 V, ID = 2.5 A)
RDS(on)2 = 86 m MAX. (VGS = 4.5 V, ID = 2.5 A)
RDS(on)3 = 96 m MAX. (VGS = 4.0 V, ID = 2.5A)
` Low on-state resistance
RDS(on)1 = 57 m MAX. (VGS = 10 V, ID = 2.5 A)
RDS(on)2 = 86 m MAX. (VGS = 4.5 V, ID = 2.5 A)
RDS(on)3 = 96 m MAX. (VGS = 4.0 V, ID = 2.5A)
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