UPA1758G-E2., UPA1759, UPA1759G Selling Leads, Datasheet
MFG:NEC Package Cooled:SOP-8 D/C:03+
UPA1758G-E2., UPA1759, UPA1759G Datasheet download
Part Number: UPA1758G-E2.
MFG: NEC
Package Cooled: SOP-8
D/C: 03+
UPA1758G-E2., UPA1759, UPA1759G
- Table of contents:
Info of UPA1758G-E2.
Info of UPA1759
Info of UPA1759G
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About UPA0J821MPD
PDF/DataSheet Download
Datasheet: UPA0J821MPD
File Size: 91743 KB
Manufacturer: NICHICON [Nichicon corporation]
Download : Click here to Download
About UPA1759
PDF/DataSheet Download
Datasheet: UPA1759
File Size: 39415 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About UPA1759G
PDF/DataSheet Download
Datasheet: UPA1759G
File Size: 39415 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
UPA1759 General Description
This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters.
UPA1759 Maximum Ratings
| Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation (1 unit)Note2 Total Power Dissipation (2unit)Note2 Channel Temperature Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy Note3 |
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg IAS EAS |
60 ±20 ±5.0 ±20 1.7 2.0 150 55 to + 150 2.5 0.625 |
V V A A W W °C °C A mJ |
Notes 1. PW £ 10 ms, Duty cycle £ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 1.7 mm
3. Starting Tch = 25 °C, RG = 25 W, VGS = 20 V ® 0 V
UPA1759 Features
· Dual chip type
· Low on-resistance
RDS(on)1 = 110 mW TYP. (VGS = 10 V, ID = 2.5 A)
RDS(on)2 = 170 mW TYP. (VGS = 4 V, ID = 2.5 A)
· Low input capacitance Ciss = 190 pF TYP.
· Built-in G-S protection diode
· Small and surface mount package (Power SOP8)
· Low on-resistance
RDS(on)1 = 110 mW TYP. (VGS = 10 V, ID = 2.5 A)
RDS(on)2 = 170 mW TYP. (VGS = 4 V, ID = 2.5 A)
· Low input capacitance Ciss = 190 pF TYP.
· Built-in G-S protection diode
· Small and surface mount package (Power SOP8)
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