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UPA1715G-E1/JM, UPA1715GR-E1-A, UPA1716

Table of contents:
Info of UPA1715G-E1/JM
Info of UPA1715GR-E1-A
Info of UPA1716

UPA1715G-E1/JM, UPA1715GR-E1-A, UPA1716 Selling Leads, Datasheet

MFG:NEC Package Cooled:SOP-8 D/C:09+

UPA1715G-E1/JM, UPA1715GR-E1-A, UPA1716 Picture

UPA1715G-E1/JM, UPA1715GR-E1-A, UPA1716 Datasheet download

Five Points

Part Number: UPA1715G-E1/JM

MFG: NEC

Package Cooled: SOP-8

D/C: 09+

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UPA1716 General Description

This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management
applications of notebook computers.

UPA1716 Maximum Ratings

Drain to Source Voltage (V _GS = 0 V)
Gate to Source Voltage (V _DS = 0 V)
Drain Current (DC)
Drain Current (pulse) ^Note1
Total Power Dissipation (TA = 25°C) ^Note2Channel Temperature
Storage Temperature

V_DSSV _GSS
ID(DC)
ID_(pulse)P _TTch
T_stg

30
20
8
32
2.0
150
55 to+150

V
V
A
A
W
°C
°C

Notes
1. PW £ 10 m s, Duty Cycle £ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 1.0 mm

UPA1716 Features

` Low on-resistance
    RDS(on)1 = 12.5 mW TYP. (VGS = 10 V, ID = 4 A)
    RDS(on)2 = 17.0 mW TYP. (VGS = 4.5 V, ID = 4 A)
    RDS(on)3 = 19.0 mW TYP. (VGS = 4.0 V, ID = 4 A)
` Low Ciss : Ciss = 2100 pF TYP.
` Built-in G-S protection diode

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