TSME42407AVQ, TSMF1000, TSMF1020 Selling Leads, Datasheet
MFG:ST Package Cooled:SMD-28 D/C:04+
TSME42407AVQ, TSMF1000, TSMF1020 Datasheet download
Part Number: TSME42407AVQ
MFG: ST
Package Cooled: SMD-28
D/C: 04+
TSME42407AVQ, TSMF1000, TSMF1020
- Table of contents:
Info of TSME42407AVQ
Info of TSMF1000
Info of TSMF1020
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About TSM
PDF/DataSheet Download
Datasheet: TSM
File Size: 678072 KB
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About TSMF1000
PDF/DataSheet Download
Datasheet: TSMF1000
File Size: 39889 KB
Manufacturer: Vishay
Download : Click here to Download
About TSM
PDF/DataSheet Download
Datasheet: TSM
File Size: 678072 KB
Manufacturer:
Download : Click here to Download
TSMF1000 General Description
TSMF1000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package
In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology.Therefore these emitters are ideally suitable as high performance replacements of standard emitters.
TSMF1000 Maximum Ratings
| Parameter | Test Conditions | Symbol | Value | Unit |
| Reverse Voltage | VR | 5 | V | |
| Forward Current | IF | 100 | mA | |
| Peak Forward Current | tp/T = 0.5, tp = 100s | IFM | 200 | mA |
| Surge Forward Current | tp = 100 s | IFSM | 1.0 | A |
| Power Dissipation | PV | mW | ||
| Junction Temperature | Tj | 100 | ||
| Operating Temperature Range | Tamb | 40...+85 | ||
| Storage Temperature Range | Tstg | 40...+85 | ||
| Soldering Temperature | t5sec, 2 mm from case | Tsd | 260 |
TSMF1000 Features
• Extra high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity = ± 17•
• Peak wavelength p = 870 nm
• High reliability
• Good spectral matching to Si photodetectors
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity = ± 17•
• Peak wavelength p = 870 nm
• High reliability
• Good spectral matching to Si photodetectors
TSMF1000 Typical Application
IrDA compatible Free air transmission systems For control and drive circuits Photointerrupters Punched tape readers
TSMF1020 General Description
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
TSMF1020 Maximum Ratings
Tamb = 25 , unless otherwise specified
|
Parameter |
Test condition |
Symbol |
Value |
Unit |
| Reverse Voltage |
VR |
5 |
V | |
| Forward Current |
IF |
100 |
mA | |
| Peak Forward Current | tp/T = 0.5, tp = 100 s |
IFM |
200 |
mA |
| Surge Forward Current | tp = 100 s |
IFSM |
0.8 |
A |
| Power Dissipation |
PV |
190 |
mW | |
| Junction Temperature |
Tj |
100 |
||
| Operating Temperature Range |
Tamb |
- 40 to + 85 |
||
| Storage Temperature Range |
Tstg |
- 40 to + 100 |
||
| Soldering Temperature | t 5sec |
Tsd |
<260 |
|
| Thermal Resistance Junction/Ambient |
RthJA |
400 |
TSMF1020 Features
• High speed
• Extra high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity = ± 17°
• Peak wavelength p = 870 nm
• Longterm reliability
• Matched with PIN Photodiode TEMD1000
• Versatile terminal configurations
• Extra high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity = ± 17°
• Peak wavelength p = 870 nm
• Longterm reliability
• Matched with PIN Photodiode TEMD1000
• Versatile terminal configurations
TSMF1020 Typical Application
IrDA compatible data transmission
Miniature light barrier
For control and drive circuits
Photointerrupters
Incremental sensors
Miniature light barrier
For control and drive circuits
Photointerrupters
Incremental sensors
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