TISP4400, TISP4400H3, TISP4400H3BJ Selling Leads, Datasheet
MFG:Power Package Cooled:TO-92 D/C:07+
TISP4400, TISP4400H3, TISP4400H3BJ Datasheet download
Part Number: TISP4400
MFG: Power
Package Cooled: TO-92
D/C: 07+
TISP4400, TISP4400H3, TISP4400H3BJ
- Table of contents:
Info of TISP4400
Info of TISP4400H3
Info of TISP4400H3BJ
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About TISP4400H3BJ
PDF/DataSheet Download
Datasheet: TISP4400H3BJ
File Size: 319702 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
About TISP4400H3BJ
PDF/DataSheet Download
Datasheet: TISP4400H3BJ
File Size: 319702 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
About TISP4400H3BJ
PDF/DataSheet Download
Datasheet: TISP4400H3BJ
File Size: 319702 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
TISP4400H3BJ General Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused bya.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. Asingle device provides 2-point protection and is typically used for the protection of 2-wire telecommunicationequipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices canbe used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initiallyclipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.
This TISP4xxxH3BJ range consists of thirteen voltage variants to meet various maximum system voltage levels (58 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available.
TISP4400H3BJ Maximum Ratings
|
RATING |
SYMBOL |
VALUE |
UNIT |
|
|
VDRM |
± 58 ± 65 ± 75 ±100 ±120 ±135 ±145 ±155 ±180 ±200 ±230 ±275 ±300 |
V |
| Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 5/320 µs (FCC Part 68, 9/720 µs voltage wave shape) 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) |
ITSP |
500 300 250 220 200 200 200 200 200 160 100 |
A |
| Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. |
ITSM |
55 60 2.3 |
A |
| Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A |
diT/dt |
400 |
A/µs |
| Junction temperature |
TJ |
-40 to +150 |
°C |
| Storage temperature range |
Tstg |
-65 to +150 |
°C |
TISP4400H3BJ Connection Diagram
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