MFG:Power Innovation Package Cooled:25969+ D/C:02
TISP4040L1BJ, TISP4040L1BJR-S, TISP4070H3BJ Datasheet download
MFG: Power Innovation
Package Cooled: 25969+
D/C: 02
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PDF/DataSheet Download
Datasheet: TIS150-124
File Size: 302333 KB
Manufacturer: TRACOPOWER [TRACO Electronic AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TIS150-124
File Size: 302333 KB
Manufacturer: TRACOPOWER [TRACO Electronic AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TISP4070H3BJ
File Size: 319702 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
These devices are designed to limit overvoltages on digital telecommunication lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of transformer windings and low voltage electronics.
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current falls below the holding current value.
|
Rating |
Symbol |
Value |
Unit |
| Repetitive peak off-state voltage '4015 '4030 '4040 |
VDRM |
±8 ±15 ± 25 |
V |
| Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 s (Telcordia GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 5/310 s (ITU-T K.20/45/21, 10/700 s voltage wave shape) 5/320 s (FCC Part 68, 9/720 s voltage wave shape) 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 10/1000 s (Telcordia GR-1089-CORE, 10/1000 s voltage wave shape) |
ITSP |
± 150 ± 120 ± 65 ± 45 ± 45 ± 35 ± 30 |
A |
| Non-repetitive peak on-state current (see Notes 1 and 2) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 0.2 s 50 Hz/60 Hz a.c. 2 s 50 Hz/60 Hz a.c. 1000 s 50 Hz/60 Hz a.c. |
ITSM |
20 22 13 5 1.8 |
A |
| Initial rate of rise of current (2/10 waveshape) |
di/dt |
130 |
A/s |
| Maximum junction temperature |
TJM |
150 |
|
| Storage temperature range |
Tstg |
-65 to +150 |
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused bya.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. Asingle device provides 2-point protection and is typically used for the protection of 2-wire telecommunicationequipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices canbe used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initiallyclipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.
This TISP4xxxH3BJ range consists of thirteen voltage variants to meet various maximum system voltage levels (58 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available.
|
RATING |
SYMBOL |
VALUE |
UNIT |
|
|
VDRM |
± 58 ± 65 ± 75 ±100 ±120 ±135 ±145 ±155 ±180 ±200 ±230 ±275 ±300 |
V |
| Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 5/320 µs (FCC Part 68, 9/720 µs voltage wave shape) 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) |
ITSP |
500 300 250 220 200 200 200 200 200 160 100 |
A |
| Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. |
ITSM |
55 60 2.3 |
A |
| Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A |
diT/dt |
400 |
A/µs |
| Junction temperature |
TJ |
-40 to +150 |
°C |
| Storage temperature range |
Tstg |
-65 to +150 |
°C |
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