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TISP1082L, TISP2072F3, TISP2072F3SLS

Table of contents:
Info of TISP1082L
Info of TISP2072F3
Info of TISP2072F3SLS

TISP1082L, TISP2072F3, TISP2072F3SLS Selling Leads, Datasheet

MFG:TL Package Cooled:TO-126 D/C:02+

TISP1082L, TISP2072F3, TISP2072F3SLS Picture

TISP1082L, TISP2072F3, TISP2072F3SLS Datasheet download

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Part Number: TISP1082L

MFG: TL

Package Cooled: TO-126

D/C: 02+

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TISP1082L General Description

The TISP1082L is designed specifically for telephone line card protection against lightning and transients induced by a.c. power lines. These devices will supress voltage transients between terminals A and C, B and C, and A and B.

Negative transients are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides. Positive transients are clipped by diode action.

These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.

TISP1082L Maximum Ratings

RATING	SYMBOL	VALUE	UNIT
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs) 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 0.2/310 µs (RLM 88, open-circuit voltage wave shape1.5 kV, 0.5/700 µs) 5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs) 10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)	I_TSP	150 60 50 38 50 50 45 50	A
Non-repetitive peak on-state current, 50 Hz, 0.7 s (see Notes 1 and 2)	I_TSM	10	A rms
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A	di_T/dt	250	A/s
Junction temperature	T_J	150	°C
Operating free - air temperature range		0 to 70	°C
Storage temperature range	T_stg	-40 to+150	°C
Lead temperature 1.5 mm from case for 10 s	T_lead	260	°C

TISP2072F3 General Description

These low voltage dual symmetrical transient voltage suppressor devices are designed to protect ISDN applications against transients caused by lightning strikes and a.c. power lines. Offered in two voltage variants to meet battery and protection requirements they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. Transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides.

These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system innormal operation

TISP2072F3 Maximum Ratings

RATING		SYMBOL	VALUE	UNIT
Repetitive peak off-state voltage (0°C <T_J < 70°C)	'2072F3 '2082F3	_^VDRM	± 58 ± 66	V
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 120 2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs) 80 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 70 10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 0.5/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38 5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45 10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs) 35		I_TSP	120 80 70 60 50 38 50 50 45 35	A
Non-repetitive peak on-state current (see Notes 2 and 3) 50 Hz, 1 s	D Package P Package SL Package	I_TSM	4 6 6	A rms
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A		d_iF/dt	250	A/µs
Junction temperature		T_J	-40 to +150	°C
Storage temperature range		T_stg	-40 to +150	°C

TISP2072F3 Connection Diagram

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