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The STV160NF02L represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial
STV160NF02L Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
20
V
VDGR
Drain-gate Voltage (RGS = 20 k)
20
V
VGS
Gate- source voltage
±15
V
ID
Drain current (continuous) at TC = 25°C
160
A
ID
Drain current (continuous) at TC = 100°C
113
A
IDM
Drain current (pulsed)
640
A
PTOT
Total dissipation at TC = 25°C
210
W
Derating factor
1.4
W/°C
EAS
Peak diode recovery voltage slope
1.5
mJ
Tj Tstg
Operating junction temperature Storage temperature