STM8501, STM8601, STM8L101F3P6 Selling Leads, Datasheet
Package Cooled:SOP8 D/C:0000
STM8501, STM8601, STM8L101F3P6 Datasheet download
Part Number: STM8501
MFG: --
Package Cooled: SOP8
D/C: 0000
Package Cooled:SOP8 D/C:0000
STM8501, STM8601, STM8L101F3P6 Datasheet download
MFG: --
Package Cooled: SOP8
D/C: 0000
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: STM1001
File Size: 189987 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STM1001
File Size: 189987 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STM1001
File Size: 189987 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The STM8601(Dual Enhancement Mode Field Effect Transistor ( N and P Channel )) For PRODUCT SUMMARY (N-Channel), VDSS=60V, ID=4.5A, RDS(ON) (mΩ) Max=58( @ VGS=10V)/75 (@ VGS=4.5V). For PRODUCT SUMMARY (P-Channel), VDSS=-60V, ID=-3.3A, RDS(ON) (mΩ) Max=105 (@ VGS=-10V)/150 (@ VGS=-4.5V).
Absolute maximum ratings got @ TA=25°C unless otherwise noted, VDS(Drain-Source Voltage)=60V(N-Channel)/-60V(P-Channel), VGS(Gate-Source Voltage)=±20(N-Channel)/±20V(P-Channel), IDM(-Pulsed)(b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.)=16A(N-Channel)/12A(P-Channel), PD(Maximum Power Dissipation(a.Surface Mounted on FR4 Board,t < 10sec.))=2.0W(TA=25°C)/1.28W(TA=70°C), TJ, TSTG(Operating Junction and Storage Temperature Range)=-55 to 150°C.Thermal characteristics of STM8601 are RJA(Thermal Resistance, Junction-to-Ambient( a.Surface Mounted on FR4 Board,t < 10sec.))=62.5°C/W.
Electical of N-Channel STM8601 are got @ TA=25°C unless otherwise noted, BVDSS(Drain-Source Breakdown Voltage, VGS=0V , ID=250uA)=60(min)V, IDSS(Zero Gate Voltage Drain Current, VDS=48V , VGS=0V)=1(max)uA, IGSS(Gate-Body Leakage Current, VGS= ±20V , VDS=0V)=±100nA. And for P-Channel, BVDSS(Drain-Source Breakdown Voltage, VGS=0V , ID=250uA)=-60(min)V, IDSS(Zero Gate Voltage Drain Current, VDS=48V , VGS=0V)=-1(max)uA, IGSS(Gate-Body Leakage Current, VGS= ±20V , VDS=0V)=±100nA.