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SST39VF800A-90-4I-C1QE, SST39VF800Q, SST39VF800Q-90-4C-EK

Table of contents:
Info of SST39VF800A-90-4I-C1QE
Info of SST39VF800Q
Info of SST39VF800Q-90-4C-EK

SST39VF800A-90-4I-C1QE, SST39VF800Q, SST39VF800Q-90-4C-EK Selling Leads, Datasheet

MFG:SST Package Cooled:BGA D/C:02+

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SST39VF800A-90-4I-C1QE, SST39VF800Q, SST39VF800Q-90-4C-EK Datasheet download

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Part Number: SST39VF800A-90-4I-C1QE

MFG: SST

Package Cooled: BGA

D/C: 02+

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SST39VF800Q General Description

The SST39VF800Q/VF800 devices are 512K x 16 CMOS Multi-Purpose Flash (MPF) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF800Q/VF800 write (Program or Erase) with a 2.7-3.6V power supply. The SST39VF800Q/ VF800 conform to JEDEC standard pinouts for x16 memories.

Featuring high performance word program, the SST39VF800Q/VF800 devices provide a typical word program time of 14 µsec. The entire memory can typically be erased and programmed word-by-word in 8 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, the SST39VF800Q/VF800 have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST39VF800Q/VF800 are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years.

The SST39VF800Q/VF800 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the SST39VF800Q/VF800 significantly improve performance and reliability, while lowering power consumption. The SST39VF800Q/VF800 inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. The SST39VF800Q/ VF800 also improve flexibility while lowering the cost for program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/ Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose erase and program times increase with accumulated Erase/Program cycles.

To meet high density, surface mount requirements, the SST39VF800Q/VF800 are offered in 48-pin TSOP and 48-pin TFBGA packages. See Figures 1 and 2 for pinouts.

SST39VF800Q Maximum Ratings

Temperature Under Bias .............................................................................................................. -55°C to +125°C
Storage Temperature .................................................................................................................. -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential ................................................................... -0.5V to V_DDQ⁽²⁾ + 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential .............................................. -1.0V to V_DDQ ⁽²⁾ + 1.0V
Voltage on A9 Pin to Ground Potential .............................................................................................. -0.5V to 13.2V
Package Power Dissipation Capability (Ta = 25°C) .......................................................................................... 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) ............................................................................... 240°C
Output Short Circuit Current⁽¹⁾ ....................................................................................................................... 50 mA

SST39VF800Q Features

• Organized as 512 K X 16
• Single 2.7-3.6V Read and Write Operations
• VDDQ Power Supply to Support 5V I/O for SST39VF800Q
   - VDDQ not available on SST39VF800
• Superior Reliability
   - Endurance: 100,000 Cycles (typical)
   - Greater than 100 years Data Retention
• Low Power Consumption:
   - Active Current: 15 mA (typical)
   - Standby Current: 3 µA (typical)
   - Auto Low Power Mode: 3 µA (typical)
• Small Sector Erase Capability (256 sectors)
   - Uniform 2 KWord sectors
• Block Erase Capability (16 blocks)
   - Uniform 32 KWord blocks
• Fast Read Access Time:
   - 70 and 90 ns
• Latched Address and Data
• Fast Sector Erase and Word Program:
   - Sector Erase Time: 18 ms (typical)
   - Block Erase Time: 18 ms (typical)
   - Chip Erase Time: 70 ms (typical)
   - Word Program time: 14 µs (typical)
   - Chip Rewrite Time: 8 seconds (typical)
• Automatic Write Timing
   - Internal V_PP Generation
• End of Write Detection
   - Toggle Bit
   - Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
   - Flash EEPROM Pinouts and command sets
• Packages Available
   - 48-Pin TSOP (12mm x 20mm)
   - 6 x 8 Ball TFBGA

SST39VF800Q Connection Diagram

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