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The SST39VF168x devices are 2M x8 CMOS Multi-Pur-pose Flash Plus (MPF+) manufactured with SST's propri-etary, high performance CMOS SuperFlash technology.The split-gate cell design and thick-oxide tunneling injec-tor attain better reliability and manufacturability compared with alternate approaches. The SST39VF168x write (Pro-gram or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x8 mem-ories.
Featuring high performance Byte-Program, the SST39VF168x devices provide a typical Byte-Program time of 7 µsec. These devices use Toggle Bit or Data# Poll-ing to indicate the completion of Program operation. To pro-tect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manu- factured, and tested for a wide spectrum of applications,these devices are offered with a guaranteed typical endur-ance of 100,000 cycles. Data retention is rated at greater than 100 years.
SST39VF1682 Maximum Ratings
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . -65°C to +150°C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . -2.0V to VDD+2.0V Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . .. . . . . 1.0W Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . 240°C Output Short Circuit Current1 . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . .. . . 50 mA
SST39VF1682 Features
• Organized as 2M x8 • Single Voltage Read and Write Operations 2.7-3.6V • Superior Reliability Endurance: 100,000 Cycles (Typical) Greater than 100 years Data Retention • Low Power Consumption (typical values at 5 MHz Active Current: 9 mA (typical) Standby Current: 3 µA (typical) Auto Low Power Mode: 3 µA (typical) • Hardware Block-Protection/WP# Input Pin Top Block-Protection (top 64 KByte) for SST39VF1682 Bottom Block-Protection (bottom 64 KByte) for SST39VF1681 • Sector-Erase Capability Uniform 4 KByte sectors • Block-Erase Capability Uniform 64 KByte blocks • Chip-Erase Capability • Erase-Suspend/Erase-Resume Capabilities • Hardware Reset Pin (RST#) • Security-ID Feature SST: 128 bits; User: 128 bits • Fast Read Access Time: 70 ns 90 ns • Latched Address and Data • Fast Erase and Byte-Program: Sector-Erase Time: 18 ms (typical) Block-Erase Time: 18 ms (typical) Chip-Erase Time: 40 ms (typical) Byte-Program Time: 7 µs (typical) • Automatic Write Timing Internal VPP Generation • End-of-Write Detection Toggle Bits Data# Polling • CMOS I/O Compatibility • JEDEC Standard Flash EEPROM Pinouts and Command sets • Packages Available 48-ball TFBGA (6mm x 8mm) 48-lead TSOP (12mm x 20mm)