SST39VF040P, SST39VF080, SST39VF080-70-4C Selling Leads, Datasheet
MFG:SST Package Cooled:06+ D/C:04+
SST39VF040P, SST39VF080, SST39VF080-70-4C Datasheet download
Part Number: SST39VF040P
MFG: SST
Package Cooled: 06+
D/C: 04+
MFG:SST Package Cooled:06+ D/C:04+
SST39VF040P, SST39VF080, SST39VF080-70-4C Datasheet download
MFG: SST
Package Cooled: 06+
D/C: 04+
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Datasheet: SST
File Size: 83114 KB
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PDF/DataSheet Download
Datasheet: SST39VF080
File Size: 319455 KB
Manufacturer: SST [Silicon Storage Technology, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SST39VF080-70-4C-B3I
File Size: 319455 KB
Manufacturer: SST [Silicon Storage Technology, Inc]
Download : Click here to Download
The SST39LF/VF080 and SST39LF/VF016 devices are 1M x8 / 2M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF080/016 write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF080/016 write (Program or Erase) with a 2.7-3.6V power supply. They conform to JEDEC standard pinouts for x8 memories.
Featuring high performance Byte-Program, the SST39LF/ VF080 and SST39LF/VF016 devices provide a typical Byte-Program time of 14 µsec. The devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years.
The SST39LF/VF080 and SST39LF/VF016 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption.
They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. They also improve flexibility while lowering
the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the SST39LF/VF080 and SST39LF/VF016 are offered in 40- lead TSOP and 48-ball TFBGA packaging. See Figures 1 and 2 for pinouts.