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SST39VF010A-70-4C-PH, SST39VF016, SST39VF016-55-4C-EI

Table of contents:
Info of SST39VF010A-70-4C-PH
Info of SST39VF016
Info of SST39VF016-55-4C-EI

SST39VF010A-70-4C-PH, SST39VF016, SST39VF016-55-4C-EI Selling Leads, Datasheet

MFG:SST Package Cooled:DIP32 D/C:0341+

SST39VF010A-70-4C-PH, SST39VF016, SST39VF016-55-4C-EI Picture

SST39VF010A-70-4C-PH, SST39VF016, SST39VF016-55-4C-EI Datasheet download

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Part Number: SST39VF010A-70-4C-PH

MFG: SST

Package Cooled: DIP32

D/C: 0341+

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SST39VF016 General Description

The SST39LF/VF080 and SST39LF/VF016 devices are 1M x8 / 2M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF080/016 write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF080/016 write (Program or Erase) with a 2.7-3.6V power supply. They conform to JEDEC standard pinouts for x8 memories.

Featuring high performance Byte-Program, the SST39LF/ VF080 and SST39LF/VF016 devices provide a typical Byte-Program time of 14 µsec. The devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years.

The SST39LF/VF080 and SST39LF/VF016 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption.

They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. They also improve flexibility while lowering
the cost for program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.

To meet high density, surface mount requirements, the SST39LF/VF080 and SST39LF/VF016 are offered in 40- lead TSOP and 48-ball TFBGA packaging. See Figures 1 and 2 for pinouts.

SST39VF016 Maximum Ratings

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V_DD + 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to V_DD + 1.0V
Voltage on A₉ Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current¹ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

SST39VF016 Features

• Organized as 1M x8 / 2M x8
• Single Voltage Read and Write Operations
   3.0-3.6V for SST39LF080/016
   2.7-3.6V for SST39VF080/016
• Superior Reliability
   Endurance: 100,000 Cycles (typical)
   Greater than 100 years Data Retention
• Low Power Consumption:
   Active Current: 15 mA (typical)
   Standby Current: 4 µA (typical)
   Auto Low Power Mode: 4 µA (typical)
• Sector-Erase Capability
   Uniform 4 KByte sectors
• Block-Erase Capability
   Uniform 64 KByte blocks
• Fast Read Access Time:
   55 ns for SST39LF080/016
   70 and 90 ns for SST39VF080/016
• Latched Address and Data
• Fast Erase and Byte-Program:
   Sector-Erase Time: 18 ms (typical)
   Block-Erase Time: 18 ms (typical)
   Chip-Erase Time: 70 ms (typical)
   Byte-Program Time: 14 µs (typical)
   Chip Rewrite Time:
          15 seconds (typical) for SST39LF/VF080
          30 seconds (typical) for SST39LF/VF016
• Automatic Write Timing
   Internal V_PP Generation
• End-of-Write Detection
   Toggle Bit
   Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
   Flash EEPROM Pinouts and command sets
• Packages Available
   40-lead TSOP (10mm x 20mm)
   48-ball TFBGA (6mm x 8mm)

SST39VF016 Connection Diagram

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