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SST34HF32A4-70-4E-L1P, SST34HF32A4-70-4E-LSE, SST36VF1601

Table of contents:
Info of SST34HF32A4-70-4E-L1P
Info of SST34HF32A4-70-4E-LSE
Info of SST36VF1601

SST34HF32A4-70-4E-L1P, SST34HF32A4-70-4E-LSE, SST36VF1601 Selling Leads, Datasheet

MFG:SST Package Cooled:BGA D/C:M527002+

SST34HF32A4-70-4E-L1P, SST34HF32A4-70-4E-LSE, SST36VF1601 Picture

SST34HF32A4-70-4E-L1P, SST34HF32A4-70-4E-LSE, SST36VF1601 Datasheet download

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Part Number: SST34HF32A4-70-4E-L1P

MFG: SST

Package Cooled: BGA

D/C: M527002+

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SST36VF1601 General Description

The SST36VF1601 is 1M x16 CMOS Concurrent Read/ Write Flash Memory manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.The SST36VF1601 writes (Program or Erase) with a 2.7-3.6V power supply. The SST36VF1601 device conforms to JEDEC standard pinouts for x16 memories.

Featuring high performance Word-Program, the SST36VF1601 device provides a typical Word-Program time of 14 µsec. The devices use Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent write, the SST36VF1601 device has on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST36VF1601 device is offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years.

The SST36VF1601 is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the SST36VF1601 significantly improves performance and reliability, while lowering power consumption. The SST36VF1601 inherently uses less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. The SST36VF1601 also improves flexibility while lowering the cost for program, data, and configuration storage applications.

SST36VF1601 Maximum Ratings

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V_DD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . .. . . .. .. . -2.0V to V_DD+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

SST36VF1601 Features

• Organized as 1M x16
• Dual Bank Architecture for Concurrent Read/Write Operation
   16 Mbit Bottom Sector Protection
   - SST36VF1601: 12 Mbit + 4 Mbit
• Single 2.7-3.6V for Read and Write Operations
• Superior Reliability
   Endurance: 100,000 cycles (typical)
   Greater than 100 years Data Retention
• Low Power Consumption:
   Active Current: 25 mA
   Standby Current: 4 µA
• Hardware Sector Protection/WP# Input Pin
   Protects 4 outermost sectors (4 KWord) in the larger bank by driving WP# low and unprotects by driving WP# high
• Hardware Reset Pin (RST#)
   Resets the internal state machine to reading array data
• Sector-Erase Capability
   Uniform 1 KWord sectors
• Block-Erase Capability
   Uniform 32 KWord blocks
• Fast Read Access Time
   70 ns
• Latched Address and Data
• Fast Erase and Word-Program (typical):
   Sector-Erase Time: 18 ms
   Block-Erase Time: 18 ms
   Chip-Erase Time: 70 ms
   Word-Program Time: 14 µs
   Chip Rewrite Time: 8 seconds
• Automatic Write Timing
   Internal V_PP Generation
• End-of-Write Detection
   Toggle Bit
   Data# Polling
   Ready/Busy# pin
• CMOS I/O Compatibility
• Conforms to Common Flash Memory Interface (CFI)
• JEDEC Standards
   Flash EEPROM Pinouts and command sets
• Packages Available
   48-lead TSOP (12mm x 20mm)
   48-ball TFBGA (8mm x 10mm)

SST36VF1601 Connection Diagram

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