SSI1N60ATU, SSI1N60B, SSI1N60BTU Selling Leads, Datasheet
MFG:FSC Package Cooled:N/A D/C:N/A
SSI1N60ATU, SSI1N60B, SSI1N60BTU Datasheet download
Part Number: SSI1N60ATU
MFG: FSC
Package Cooled: N/A
D/C: N/A
SSI1N60ATU, SSI1N60B, SSI1N60BTU
- Table of contents:
Info of SSI1N60ATU
Info of SSI1N60B
Info of SSI1N60BTU
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About SSI10N60B
PDF/DataSheet Download
Datasheet: SSI10N60B
File Size: 702950 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSI1N60B
PDF/DataSheet Download
Datasheet: SSI1N60B
File Size: 622486 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSI10N60B
PDF/DataSheet Download
Datasheet: SSI10N60B
File Size: 702950 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SSI1N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSI1N60B Maximum Ratings
| Symbol | Parameter | SSW1N60B / SSI1N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
1.0 | A |
| 0.6 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 3.0 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 50 | mJ |
| IAR | Avalanche Current (Note 1) | 1.0 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 3.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Power Dissipation (TA = 25°C) |
3.13 | W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
34 | W | |
| 0.27 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55 to +150 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C |
SSI1N60B Features
• 1.0A, 600V, R DS(on) = 12Ω @VGS = 10 V
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 5.9 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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