SIHLU110, SIHLU120, SIHLZ14L Selling Leads, Datasheet
MFG:Vishay Package Cooled:TO-252 D/C:2010+
SIHLU110, SIHLU120, SIHLZ14L Datasheet download
Part Number: SIHLU110
MFG: Vishay
Package Cooled: TO-252
D/C: 2010+
SIHLU110, SIHLU120, SIHLZ14L
- Table of contents:
Info of SIHLU110
Info of SIHLU120
Info of SIHLZ14L
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About SIHM44
PDF/DataSheet Download
Datasheet: SIHM44
File Size: 644619 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SIHM44
PDF/DataSheet Download
Datasheet: SIHM44
File Size: 644619 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SIHM44
PDF/DataSheet Download
Datasheet: SIHM44
File Size: 644619 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
SIHLZ14L General Description
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRLZ44L/SiHLZ44L) is available for low-profile applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRLZ44L/SiHLZ44L) is available for low-profile applications.
SIHLZ14L Maximum Ratings
| PARAMETER | SYMBOL | LIMIT | UNIT | ||
| Drain-Source Voltagee | VDS | 60 | V | ||
| Gate-Source Voltage | VGS | ± 10 | |||
| Continuous Drain Current | VGS at 5 V | TC = 25 | ID | 10 | A |
| TC = 100 | ID | 7.2 | |||
| Pulsed Drain Currenta, e | IDM | 40 | |||
| Linear Derating Factor | 0.29 | W/ | |||
| Single Pulse Avalanche Energyb, e | EAS | 68 | mJ | ||
| Maximum Power Dissipation | TC = 25 | PD | 43 | W | |
| TA = 25 | PD | 3.7 | |||
| Peak Diode Recovery dV/dtc, e | dV/dt | 4.5 | V/ns | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 to + 175 | |||
| Soldering Recommendations (Peak Temperature) | for 10 s | 300d | |||
SIHLZ14L Features
• Advanced Process Technology
• Surface Mount (IRLZ14S/SiHLZ14S)
• Low-Profile Through-Hole (IRLZ14L/SiHLZ14L)
• 175 Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
• Surface Mount (IRLZ14S/SiHLZ14S)
• Low-Profile Through-Hole (IRLZ14L/SiHLZ14L)
• 175 Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
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