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SIHFR110, SIHFR120, SIHFR1N60A

Table of contents:
Info of SIHFR110
Info of SIHFR120
Info of SIHFR1N60A

SIHFR110, SIHFR120, SIHFR1N60A Selling Leads, Datasheet

MFG:Vishay Package Cooled:TO-252 D/C:2010+

SIHFR110, SIHFR120, SIHFR1N60A Datasheet download

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Part Number: SIHFR110

MFG: Vishay

Package Cooled: TO-252

D/C: 2010+

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SIHFR110 General Description

The SiHFR110 is designed as the third generation power MOSFETs from vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surcace mount applications.

It has seven features. (1)Dynamic dV/dt rating. (2)Repetitive avalanche rated. (3)Surface mount. (4)Available in tape and reel. (5)Fast switching. (6)Ease of paralleling. (7)Lead (Pb)-free available. That are all the main features.

Some absolute maximum ratings are concluded into several points as follow. (1)Its drain to source voltage would be 100V. (2)Its gate source voltage is +/-20V. (3)Its continuous drain current is 4.3A at 25°C and would be 2.7A at 100°C. (4)Its pulsed drain current would be 17A. (5)Its linear derating factor would be 0.20W/°C. (6)Its linear derating factor (PCB mount) is 0.020W/°C. (7)Its single pulse avalanche energy would be 100mJ. (8)Its repetitive avalanche current is 4.3A. (9)Its repetitive avalanche energy would be 2.5mJ. (10)Its maximum power dissipation would be 25W. (11)Its maximum power dissipation PCB mount would be 2.5W. (12)Its peak diode recovery dv/dt would be 5.5V/ns. (13)Its operating junction and storage temperature range is from -55°C to +150°C. (14)Its soldering recommendations peak temperature would be 260°C.

Also some other specifications are concluded as follow. (1)Its drain source breakdown voltage would be min 100V. (2)Its Vds temperature coefficient would be typ 0.13V/°C. (3)Its gate to source threshold voltage would be min 2.0V and max 4.0V. (4)Its gate to source leakage would be max +/-100nA. (5)Its drain to source on-state resistance is max 0.54. (6)Its forward transconductance is min 1.6S. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

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