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SI3861DV-T1-E3, SI3863DV, SI3863DV-T1-E3

Table of contents:
Info of SI3861DV-T1-E3
Info of SI3863DV
Info of SI3863DV-T1-E3

SI3861DV-T1-E3, SI3863DV, SI3863DV-T1-E3 Selling Leads, Datasheet

MFG:VISHAY Package Cooled:09+(ROHS) D/C:60000

SI3861DV-T1-E3, SI3863DV, SI3863DV-T1-E3 Picture

SI3861DV-T1-E3, SI3863DV, SI3863DV-T1-E3 Datasheet download

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Part Number: SI3861DV-T1-E3

MFG: VISHAY

Package Cooled: 09+(ROHS)

D/C: 60000

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SI3863DV General Description

The Si3863DV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFET^® is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3863DV operates on supply lines from 2.5 to 12-V, and can drive loads up to 2.5 A.

SI3863DV Maximum Ratings

Parameter		Symbol	Limit	Unit
Input Voltage		V_IN	12	V
ON/OFF Voltage		V_ON/OFF	8
Load Current	Continuous^{a, b}	I_L	±2.5	A
	Pulsed^{b, c}		±5
Continuous Intrinsic Diode Conduction^a		I_S	-1
Maximum Power Dissipation^a		P_D	0.83	W
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500)		ESD	3	kV

SI3863DV Features

· 105-m Low rDS(on) TrenchFET
· 2.5 to 12-V Input
· 1.5 to 8-V Logic Level Control
· Low Profile, Small Footprint TSOP-6 Package
· 3000-V ESD Protection On Input Switch, VON/OFF
· Adjustable Slew-Rate

SI3863DV Typical Application

The Si3863DV is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types.

SI3863DV Connection Diagram

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