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SI3851DV, SI3851-T1-E3, SI3853DV

Table of contents:
Info of SI3851DV
Info of SI3851-T1-E3
Info of SI3853DV

SI3851DV, SI3851-T1-E3, SI3853DV Selling Leads, Datasheet

MFG:VISHAY Package Cooled:06+ D/C:3000/REEL

SI3851DV, SI3851-T1-E3, SI3853DV Picture

SI3851DV, SI3851-T1-E3, SI3853DV Datasheet download

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Part Number: SI3851DV

MFG: VISHAY

Package Cooled: 06+

D/C: 3000/REEL

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SI3851DV General Description

P-Channel 30-V (D-S) Rated MOSFET with Schottky Diode

SI3851DV Maximum Ratings

Parameter		Symbol	5 secs	Steady State	Unit
Drain-Source Voltage(MOSFET and Schottky)		V_DS	-30		V
Reverse Voltage (Schottky)		V_KA	30
Gate-Source Voltage(MOSFET)		V_GS	±20
Continuous Drain Current (T_J = 150) (MOSFET)^a	T_A = 25	I_D	±1.8	±1.6	A
	T_A = 70		±1.5	±1.2
Pulsed Drain Current(MOSFET)		I_DM	±7
Continuous Source Current (MOSFET Diode Conduction)a		I_S	-1.05	-0.75
Average Foward Current (Schottky)		I_F	0.5
Pulsed Foward Current (Schottky)		I_FM	7
Maximum Power Dissipation (MOSFET)^a	T_A = 25	P_D	1.15	0.83	W
	T_A = 70		0.73	0.53
Maximum Power Dissipation (Schottky)^a	T_A = 25		1.0	0.76
	T_A = 70		0.64	0.48
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150

SI3851DV Connection Diagram

SI3853DV Maximum Ratings

Parameter		Symbol	5 secs	Steady State	Unit
Drain-Source Voltage(MOSFET and Schottky)		V_DS	-20		V
Reverse Voltage (Schottky)		V_KA	20
Gate-Source Voltage(MOSFET)		V_GS	±12
Continuous Drain Current (T_J = 150) (MOSFET)^a	T_A = 25	I_D	±1.8	±1.6	A
	T_A= 70		±1.5	±1.2
Pulsed Drain Current(MOSFET)		I_DM	±7
Continuous Source Current (MOSFET Diode Conduction)^a		I_S	-1.05	-0.75
Average Foward Current (Schottky)		I_F	0.5
Pulsed Foward Current (Schottky)		I_FM	7
Maximum Power Dissipation (MOSFET)^a	T_A = 25	P_D	1.15	0.83	W
	T_A = 70		0.73	0.53
Maximum Power Dissipation (Schottky)^a	T_A = 25		1.0	0.76
	T_A = 70		0.64	0.48
Operating Junction and Storage Temperature Range		T_J, T_stg	-55 to 150

SI3853DV Connection Diagram

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