SGM2014AN, SGM2014M-T1, SGM2014M-T7 Selling Leads, Datasheet
MFG:SONY Package Cooled:4P/SOT23 D/C:09+
SGM2014AN, SGM2014M-T1, SGM2014M-T7 Datasheet download
Part Number: SGM2014AN
MFG: SONY
Package Cooled: 4P/SOT23
D/C: 09+
SGM2014AN, SGM2014M-T1, SGM2014M-T7
- Table of contents:
Info of SGM2014AN
Info of SGM2014M-T1
Info of SGM2014M-T7
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About SGM2014AN
PDF/DataSheet Download
Datasheet: SGM2014AN
File Size: 58524 KB
Manufacturer: SONY [Sony Corporation]
Download : Click here to Download
About SGM2005-3.0YD6/TR
PDF/DataSheet Download
Datasheet: SGM2005-3.0YD6/TR
File Size: 538484 KB
Manufacturer: SGMICRO [Shengbang Microelectronics Co, Ltd]
Download : Click here to Download
About SGM2005-3.0YD6/TR
PDF/DataSheet Download
Datasheet: SGM2005-3.0YD6/TR
File Size: 538484 KB
Manufacturer: SGMICRO [Shengbang Microelectronics Co, Ltd]
Download : Click here to Download
SGM2014AN General Description
The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.
This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
SGM2014AN Maximum Ratings
• Drain to source voltage VDSX 12 V
• Gate 1 to source voltage VG1S 5 V
• Gate 2 to source voltage VG2S 5 V
• Drain current ID 55 mA
• Allowable power dissipation PD 100 mW
• Channel temperature Tch 125
• Storage temperature Tstg 55 to +150
• Gate 1 to source voltage VG1S 5 V
• Gate 2 to source voltage VG2S 5 V
• Drain current ID 55 mA
• Allowable power dissipation PD 100 mW
• Channel temperature Tch 125
• Storage temperature Tstg 55 to +150
SGM2014AN Features
• Ultra small package
• Low voltage operation
• Low noise: NF = 1.5dB (typ.) at 900MHz
• High gain: Ga = 18dB (typ.) at 900MHz
• Low cross-modulation
• High stability
• Built-in gate-protection diode
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