S6A13, S6A13(Q), S6A14J Selling Leads, Datasheet
MFG:TOS Package Cooled:TO260 D/C:05+
S6A13, S6A13(Q), S6A14J Datasheet download
Part Number: S6A13
MFG: TOS
Package Cooled: TO260
D/C: 05+
MFG:TOS Package Cooled:TO260 D/C:05+
S6A13, S6A13(Q), S6A14J Datasheet download
MFG: TOS
Package Cooled: TO260
D/C: 05+
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PDF/DataSheet Download
Datasheet: S6A13
File Size: 140700 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: S6A0031
File Size: 347752 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: S6A0031
File Size: 347752 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
Characteristic |
Symbol |
Rating |
Unit |
Repetitive peak OFF-state voltage |
VDRM |
800 |
V |
Repetitive peak surge ON-state current (Note) |
ITRM |
500 |
A |
Repetitive peak surge forward current (Note)) |
IFRM |
500 |
A |
Critical rate of rise of ON-state current (Note) |
di/dt |
750 |
A/s |
Peak gate power dissipation |
PGM |
5 |
W |
Average gate power dissipation |
PG(AV) |
0.5 |
W |
Peak forward gate voltage |
VFGM |
10 |
V |
Peak reverse gate voltage |
VRGM |
-5 |
V |
Peak forward gate current |
IGM |
2 |
A |
Junction temperature |
Tj |
-40~125 |
|
Storage temperature range |
Tstg |
-40~150 |
|