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The RF3375 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) pro-cess, and has been designed for use as an easily-cas-cadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz.
The device is self-contained with 50? input and output impedances and requires only two external DC-biasing elements to operate as specified.
RF3375 Maximum Ratings
Parameter
Rating
Unit
Input RF Power Operating Ambient Temperature Storage Temperature ICC
+13 -40 to +85 -60 to +150 80
dBm °C °C mA
RF3375 Features
DC to >6000MHz Operation Internally Matched Input and Output 13.2dB Small Signal Gain +28dBm Output IP3 +16.0dBm Output P1dB
RF3375 Typical Application
Basestation Applications Broadband, Low-Noise Gain Blocks F or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low-Power Applications High Reliability Applications