RF311O, RF3120, RF3122 Selling Leads, Datasheet
MFG:RF MD Package Cooled:QFN D/C:04+
RF311O, RF3120, RF3122 Datasheet download
Part Number: RF311O
MFG: RF MD
Package Cooled: QFN
D/C: 04+
MFG:RF MD Package Cooled:QFN D/C:04+
RF311O, RF3120, RF3122 Datasheet download
MFG: RF MD
Package Cooled: QFN
D/C: 04+
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PDF/DataSheet Download
Datasheet: RF3
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF3120
File Size: 63997 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF3
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spread spectrum systems, and other applications in the 1750MHz to 1780MHz band. The RF3120 has a digital bias control voltage for low current in standby mode. The device is self-contained with 50 input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground.
Parameter |
Rating |
Unit |
Supply Voltage(RF off) |
+8.0 |
VDC |
Supply Voltage (POUT29dBm) |
+4.5 |
VDC |
Mode Voltage (VREG) |
+4.2 |
VDC |
Control Voltage (VMODE) |
+3.5 |
VDC |
Input RF Power |
+10 |
dBm |
Operating Ambient Temperature |
-30 to +85 |
|
Storage Temperature |
-30 to +150 |