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RF2326, RF2334, RF2337

Table of contents:
Info of RF2326
Info of RF2334
Info of RF2337

RF2326, RF2334, RF2337 Selling Leads, Datasheet

MFG:XINGER Package Cooled:SMD D/C:3

RF2326, RF2334, RF2337 Datasheet download

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Part Number: RF2326

MFG: XINGER

Package Cooled: SMD

D/C: 3

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RF2326 General Description

The RF2326 is a general purpose, low-cost silicon amplifier designed for operation from a 3V supply. The Darlington circuit configuration with resistive feedback allows for broadband cascadable amplification. The device is unconditionally stable and internally matched to 50Ω. The only external components required for specified performance are bypass and DC blocking capacitors and two bias elements (as shown in application schematic). The RF2326 is available in a very small industry-standard SOT-23 5-lead surface mount package, enabling compact designs which conserve board space.

RF2326 Maximum Ratings

Parameter	Rating	Unit
Supply Voltage Operating Ambient Temperature Storage Temperature	4.0 -40 to +85 -55 to +150	V °C °C

RF2326 Features

• DC to >2000MHz Operation
• 2.7V to 3.3V Single Supply
• +18dBm Output IP3
• 12dBGain at 900MHz
• 10dBGain at 1900MHz
• Internally 50Ω Matched Input and Output

RF2326 Typical Application

• Broadband Gain Blocks
• Final PA for Low-Power Applications
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Oscillator Loop Amplifiers

RF2326 Connection Diagram

RF2334 General Description

The RF2334 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 4000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified. The RF2334 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling compact designs which conserve board space.

RF2334 Maximum Ratings

Parameter	Rating	Unit
Supply Current Input RF Power Operating Ambient Temperature Storage Temperature	120 +13 -40 to +75 -60 to +150	mA dBm °C °C

RF2334 Features

• DC to 4000MHz Operation
• Internally matched Input and Output
• 16dB Small Signal Gain
• 5dB Noise Figure
• 50mW Linear Output Power
• Single Positive Power Supply

RF2334 Typical Application

• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Broadband Test Equipment

RF2334 Connection Diagram

RF2337 General Description

The RF2337 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified. The RF2337 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling compact designs which conserve board space.

RF2337 Maximum Ratings

Parameter	Rating	Unit
Supply Current Input RF Power Operating Ambient Temperature Storage Temperature	75 +15 -40 to +85 -60 to +150	mA dBm °C °C

RF2337 Features

• DC to 6000MHz Operation
• Internally matched Input and Output
• 15dB Small Signal Gain
• +25dBm Output IP3
• +12dBm Output Power
• Single Positive Power Supply

RF2337 Typical Application

• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Broadband Test Equipment

RF2337 Connection Diagram

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