RF2317, RF2318, RF2320 Selling Leads, Datasheet
MFG:RFMD Package Cooled:SMD D/C:08+/09+
RF2317, RF2318, RF2320 Datasheet download
Part Number: RF2317
MFG: RFMD
Package Cooled: SMD
D/C: 08+/09+
MFG:RFMD Package Cooled:SMD D/C:08+/09+
RF2317, RF2318, RF2320 Datasheet download
MFG: RFMD
Package Cooled: SMD
D/C: 08+/09+
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PDF/DataSheet Download
Datasheet: RF2317
File Size: 155635 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF2318
File Size: 113312 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF2320
File Size: 185699 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
The RF2317 is a general purpose, low-cost high-linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatness of better than ±0.5dB from 50MHz to 1000MHz, and the high linearity, make this part ideal for cable TV applications. Other applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3GHz. The device is selfcontained with 75Ω input and output impedances and requires only two external DC biasing elements to operate as specified.
Frequency (MHz) | DC to 3000 |
Gain (dB) | 15 |
NF (dB) | 5.3 |
OP1dB (dBm) | 22 |
IP1dB (dBm) | 6 |
OIP3 (dBm) | +38 |
Vcc (V) | 9 to 12 |
Icc (mA) | 180 |
Package/Size (Dim in mm) | CJ2BAT0 |
The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatness of better than 1.0dB from 5MHz to 1000MHz, and the high linearity, make this part ideal for cable TV applications. Other applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 5000MHz. The device is self-contained with 75Ω input and output impedances, and requires only two external DC biasing elements to operate as specified.
Parameter |
Rating |
Unit |
Device Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature |
70 +13 20:1 -40 to +85 -40 to +150 |
mA dBm °C °C |
The RF2320 is a general purpose, low-cost, high-linearity RF amplifier IC. The device is manufactured on a Gallium Arsenide process and is featured in an SOP-16 batwing package. It has been designed for use as an easily cascadable 75Ω gain block with a noise figure of less than 2dB. Gain flatness better than 0.5dB from 5MHz to 1000MHz, and high linearity make this part ideal for cable TV applications. Other applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 2500MHz. The device is self-contained with 75Ω input and output impedances providing 2:1 VSWR matching. For higher input and output return losses, see the evaluation schematic.
Frequency (MHz) | 5 to 2500 |
Gain (dB) | 16.7 |
NF (dB) | 2.6 |
OP1dB (dBm) | 22 |
IP1dB (dBm) | 8 |
OIP3 (dBm) | +36 |
Vcc (V) | 6 to 9 |
Icc (mA) | 85 |
Package/Size (Dim in mm) | CJ2BAT0 |