QM100HY-2H, QM100HY-H, QM100HY-HD Selling Leads, Datasheet
MFG:MITSUBISHI Package Cooled:module D/C:07+
QM100HY-2H, QM100HY-H, QM100HY-HD Datasheet download
Part Number: QM100HY-2H
MFG: MITSUBISHI
Package Cooled: module
D/C: 07+
MFG:MITSUBISHI Package Cooled:module D/C:07+
QM100HY-2H, QM100HY-H, QM100HY-HD Datasheet download
MFG: MITSUBISHI
Package Cooled: module
D/C: 07+
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Datasheet: QM100HY-2H
File Size: 81854 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
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PDF/DataSheet Download
Datasheet: QM100HY-H
File Size: 80644 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
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PDF/DataSheet Download
Datasheet: QM100
File Size: 90096 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
The QM100HY-2H is a kind of transistor module. The typical applications include inverters, servo drives, DC motor controllers, NC equipment and welders.
There is some information about the features. (1)IC (collector current) is 100A; (2)VCEX (collector-emitter voltage) is 1000V; (3)hFE (DC current gain) is 75; (4)insulated type; (5)UL recognized.
The following is some information about the absolute maximum ratings (Tj=25, unless otherwise noted). (1):VCEX(SUS) (collector-emitter voltage) is 1000 V at IC=1 A, VEB=2 V; (2):VCEX (collector-emitter voltage) is 1000 V at VEB=2 V; (3):VCBO (collector-base voltage) is 1000 V when emitter open; (4):VEBO (emitter-base voltage) is 7 V when collector open; (5):IC (collector current) is 100 A when DC; (6):-IC (collector reverse current) is 100 A when DC (forward diode current); (7):PC (collector dissipation) is 800 W at TC=25; (8):IB (base current) is 5 A when DC; (9):-ICSM (surge collector reverse current (forward diode current)) is 1000 A when peak value of one cycle of 60 Hz (half wave); (10):TJ (junction temperature) is from -40 to +150; (11):Tstg (storage temperature) is from -40 to +125; (12):Viso (isolation voltage) is 2500 V when charged part to case, AC for 1 minute.
Symbol | Item | Conditions | Ratings | UnitV |
VCEX (SUS) | Collector-Base Voltage | IC=1A, VEB=2V | 600 | V |
VCEX | Collector-Emitter Voltage |
VBE=2V |
600 | V |
VCBO |
Collector-base voltage |
Emitter open | 600 | V |
VEBO |
Emitter-Base Voltage |
Collector open | 7 | V |
IC |
Collector Current | DC | 100 | A |
-IC |
Collector reverse current |
DC (forward diode current) | 100 | A |
PC |
Collector dissipation | TC=25°C | 620 | W |
IB |
Base Current |
DC | 6 | A |
ICSM | Surge collector reverse current (forward diode current) |
Peak value of one cycle of 60Hz (half wave) | 1000 | A |
Tj |
Junction Temperature | -40~+150 |
||
Tstg | Storage Temperature | -40~+125 | ||
VISO | Isolation Voltage | Charged part to case, AC for 1 minute | 2500 | V |
- | Mounting Torque | Main terminal screw M5 | 0.98~1.47 |
N.m |
10~15 | ||||
kg`cm | ||||
Mounting screw M6 |
1.47~1.96 |
N.m | ||
15~20 | kg`cm | |||
- | Weight |
Typical Value | 250 | g |