QCPM-9801, QCPM-9803, QCPM-9804 Selling Leads, Datasheet
MFG:N/A Package Cooled:29181+ D/C:950
QCPM-9801, QCPM-9803, QCPM-9804 Datasheet download
Part Number: QCPM-9801
MFG: N/A
Package Cooled: 29181+
D/C: 950
MFG:N/A Package Cooled:29181+ D/C:950
QCPM-9801, QCPM-9803, QCPM-9804 Datasheet download
MFG: N/A
Package Cooled: 29181+
D/C: 950
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PDF/DataSheet Download
Datasheet: QCPM-9801
File Size: 88859 KB
Manufacturer: Agilent Technologies
Download : Click here to Download
PDF/DataSheet Download
Datasheet: QCPM-9801
File Size: 88859 KB
Manufacturer: Agilent Technologies
Download : Click here to Download
PDF/DataSheet Download
Datasheet: QCPM-9804
File Size: 90957 KB
Manufacturer:
Download : Click here to Download
The Dual-Band Dual-Mode Power
Amplifier Module (PAM) offers a
highly integrated solution for CDMA dual-band Dual-mode handsets. The integrated solution leads to improvements in cost, size, performance, and reliability. This PAM also offers several features that will make handset design more flexible and robust.
The module contains two power amplifiers (PCS and Cellular PAs), two driver amplifiers with power control and bias circuits. The cellular power amplifiers provides : 29 dBm Pout and 44% Power Added Efficiency (PAE) at 3.4 V in AMPS mode. While the PCS power amplifier achieves 28.5 dBm Pout and 28 % PAE at 3.4V in PCS mode. The PAM is designed with dynamic bias control to optimize the PAE at low output power in PCS mode to maximize the system talk time.
The surface mount RF MultiPak insures cost, size, and high volume manufacturing advantages over other traditional approaches.
Cellular |
PCS | |||
Parameter |
Min. |
Max. |
Min. |
Max. |
Vcc supply voltage |
4.5 V |
4.5 V | ||
Power Dissipation2,3 |
2.5 W |
2.5 W | ||
Bias Current |
1.5 A |
1.5 A | ||
Amplifier Input RF Power |
10 dBm |
10 dBm | ||
Junction temperature |
+150 °C |
+150 °C | ||
Storage temperature (case temperature) |
40 °C |
+120 °C |
-40 °C |
+120 °C |
Notes:1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Tcase = 25 °C
3. Derate at X mW/°C for Tcase.>85 °C Recommended operating range of Vcc = 3.4 to 4.2 V, Ta = - 30 to + 85 °C (reduced performance at 3.0 V and 110 °C)
The Dual-Band Tri-Mode Power Amplifier Module (PAM) offers a highly integrated solution for CDMA dual-band tri-mode handsets.
The integrated solution leads to improvements in cost, size, performance, and reliability. This PAM also offers several features that will make handset design more flexible and robust. The module contains two power amplifiers (PCS and Cellular PAs), two driver amplifiers with power control and bias circuits. The cellular power amplifiers provide: 32.5 dBm Pout and 47% Power Added Efficiency (PAE) at 3.4 V in AMPS mode, and 28.5 dBm Pout and 29% PAE at 3.4 V in cellular CDMA mode. While the PCS power amplifier achieves 28.5 dBm Pout and 28 % PAE at 3.4V in PCS mode.
The PAM is designed with dynamic bias control to optimize the PAE at low output power in PCS and cellular CDMA mode to maximize the system talk time. The surface mount RF MultiPak insures cost, size, and high volume manufacturing advantages over other traditional approaches.
Cellular | PCS | |||
Parameter | Min. | Max. | Min. | Max. |
Vcc supply voltage | 4.5 V | 4.5 V | ||
Power Dissipation2,3 | 2.5 W | 2.5 W | ||
Bias Current | 1.5 A | 1.5 A | ||
Amplifier Input RF Power | 10 dBm | 10 dBm | ||
Junction temperature | +150 °C | +150 °C | ||
Storage temperature (case temperature) | -40 °C | +120 °C | -40 °C | +120 °C |