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PSMN009-100P, PSMN009-100P 127, PSMN009-100P127

Table of contents:
Info of PSMN009-100P
Info of PSMN009-100P 127
Info of PSMN009-100P127

PSMN009-100P, PSMN009-100P 127, PSMN009-100P127 Selling Leads, Datasheet

MFG:PHI Package Cooled:9800 D/C:TO

PSMN009-100P, PSMN009-100P 127, PSMN009-100P127 Picture

PSMN009-100P, PSMN009-100P 127, PSMN009-100P127 Datasheet download

Five Points

Part Number: PSMN009-100P

MFG: PHI

Package Cooled: 9800

D/C: TO

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PSMN009-100P General Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology.

Product availability:
PSMN009-100P in SOT78 (TO-220AB)
PSMN009-100B in SOT404 (D²-PAK).

PSMN009-100P Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	drain-source voltage (DC)	25 T_j 175	-	110	V
V_DGR	drain-gate voltage (DC)	25 T_j 175 ; R_GS= 20 k	-	100	V
V_GS	gate-source voltage (DC)		-	± 20	V
V_GSM	gate-source voltage	t_p50 ms; pulsed; duty cycle 25%; T_j 150	-	± 30	V
I_D	drain current (DC)	T_mb = 25; V_GS = 10 V; Figure 2 and 3	-	75	A
I_D	drain current (DC)	T_mb = 100; V_GS = 10 V; Figure 2	-	65	A
I_DM	peak drain current	T_mb = 25 ; pulsed; t_p 10 s; Figure 3	-	400	A
P_tot	total power dissipation	T_mb = 25 ; Figure 1	-	230	W
T_stg	storage temperature		-55	+175
T_j	junction temperature		-55	+175
Source-drain diode
I_S	source (diode forward) current (DC)	T_mb = 25	-	75	A
I_SM	peak source (diode forward) current	T_mb = 25 ; pulsed; t_p 10s	-	400	A
Avalanche ruggedness
E_DS(AL)S	non-repetitive drain-source avalanche energy	unclamped inductive load; I_D = 35 A; t_p = 0.1 ms; V_DD = 15 V; R_GS = 50 ; V_GS= 10 V; starting T_j = 25	-	120	mJ
I_DS(AL)S	non-repetitive avalanche current	unclamped inductive load; V_DD= 15 V; R_GS = 50 ; V_GS = 10 V; starting T_j= 25	-	75	A

PSMN009-100P Features

· Low on-state resistance
· Fast switching.

PSMN009-100P Typical Application

· High frequency computer motherboard DC to DC converters
· OR-ing applications.

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