PSMN008-75P, PSMN008-75P127, PSMN009 Selling Leads, Datasheet
MFG:NXP Package Cooled:SOT78/TO-220AB D/C:TO
PSMN008-75P, PSMN008-75P127, PSMN009 Datasheet download
Part Number: PSMN008-75P
MFG: NXP
Package Cooled: SOT78/TO-220AB
D/C: TO
PSMN008-75P, PSMN008-75P127, PSMN009
- Table of contents:
Info of PSMN008-75P
Info of PSMN008-75P127
Info of PSMN009
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About PSMN008-75P
PDF/DataSheet Download
Datasheet: PSMN008-75P
File Size: 135833 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PSM
PDF/DataSheet Download
Datasheet: PSM
File Size: 183846 KB
Manufacturer:
Download : Click here to Download
About PSMN009-100B
PDF/DataSheet Download
Datasheet: PSMN009-100B
File Size: 277934 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PSMN008-75P General Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability:
PSMN008-75P in SOT78
PSMN008-75B in SOT404 (D2-PAK).
Product availability:
PSMN008-75P in SOT78
PSMN008-75B in SOT404 (D2-PAK).
PSMN008-75P Maximum Ratings
|
SYMBOL |
PARAMETER |
CONDITIONS |
Min |
Max |
UNIT |
|
VDS |
drain-source voltage (DC) | Tj = 25 to 175 |
- |
75 |
V |
|
VDGR |
Drain-gate voltage(DC) | Tj= 25 to 175; RGS = 20 k |
- |
75 |
V |
|
VGS |
Gate-source voltage(DC) |
- |
75 |
A | |
|
ID |
drain current (DC) | Tmb = 25; VGS = 10 V; Figure 2 and 3 |
- |
75 |
A |
| Tmb = 100; VGS = 10 V; Figure 2 and 3 |
- |
53 |
A | ||
|
IDM |
peak drain current | Tmb = 25; pulsed; tp 10 s; Figure 2 and 3 |
- |
240 |
A |
|
Ptot |
total power dissipation | Tmb = 25; Figure 1 |
- |
230 |
W |
|
Tstg |
storage temperature |
-55 |
+175 |
||
|
Tj |
operating junction temperature |
-55 |
+75 |
||
|
Source-drain diode | |||||
|
IS |
source (diode forward) current (DC) | Tmb = 25 |
- |
75 |
A |
|
ISM |
peak source (diode forward) current |
Tmb = 25; pulsed; tp 10 s |
- |
240 |
A |
|
Avalanche ruggedness | |||||
|
EAS |
non-repetitive avalanche energy | Tmb = 25unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25; Figure 4 |
- |
360 |
mJ |
|
IAS |
non-repetitive avalanche current | unclamped inductive load; VDD 15 V; RGS = 50 ; VGS = 10 V; Figure 4 |
- |
75 |
A |
PSMN008-75P Features
· Fast switching
· Low on-state resistance
· Avalanche ruggedness rated.
· Low on-state resistance
· Avalanche ruggedness rated.
PSMN008-75P Typical Application
· DC to DC converters
· Uninterruptable power supplies.
· Uninterruptable power supplies.
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