PDTC114EU, PDTC114EU T/R, PDTC114EU.115 Selling Leads, Datasheet
MFG:Philips Package Cooled:in stock D/C:09+
PDTC114EU, PDTC114EU T/R, PDTC114EU.115 Datasheet download
Part Number: PDTC114EU
MFG: Philips
Package Cooled: in stock
D/C: 09+
MFG:Philips Package Cooled:in stock D/C:09+
PDTC114EU, PDTC114EU T/R, PDTC114EU.115 Datasheet download
MFG: Philips
Package Cooled: in stock
D/C: 09+
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Datasheet: PDTC114EU
File Size: 60315 KB
Manufacturer: Philips
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PDF/DataSheet Download
Datasheet: PDT0311
File Size: 158438 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PDT0311
File Size: 158438 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
NPN resistor-equipped transistor in a SOT323 plastic package.It has three unique features: The first one is built-in bias resistors R1 and R2(typ. 10 kW each).The second one is simplification of circuit design.The third one is it reduces number of components and board space.Besides, it also has two applications: The first one is especially suitable for space reduction in interface and driver circuits.The second one is inverter circuit configurations without use of external resistors.
There are some limiting values about it.collector-base voltage, open emitter(VCBO) is 50 V max.collector-emitter voltage, open base(VCEO) is 50 V max.emitter-base voltage open collector(VEBO) is 10 V max.peak collector current(ICM) is 100 mA max.peak collector current(ICM) is 100 mA max.total power dissipation(Ptot,Tamb is lower than 25 °C) is 200 mW max.storage temperature(Tstg) is -65 +150°C.junction temperature(Tj) is 150 °C max.operating ambient temperature(Tamb) is -65°C min and +150°C max.
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