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PDTA143EKT/R, PDTA143ES, PDTA143ET(01)

PDTA143EKT/R, PDTA143ES, PDTA143ET(01) Selling Leads, Datasheet

MFG:1034  Package Cooled:AMMO  D/C:99+

PDTA143EKT/R, PDTA143ES, PDTA143ET(01) Picture

PDTA143EKT/R, PDTA143ES, PDTA143ET(01) Datasheet download

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Part Number: PDTA143EKT/R

 

MFG: 1034

Package Cooled: AMMO

D/C: 99+

 

 

 
 
 
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About PDT0311

PDF/DataSheet Download

Datasheet: PDT0311

File Size: 158438 KB

Manufacturer: HP [Agilent(Hewlett-Packard)]

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About PDTA143ES

PDF/DataSheet Download

Datasheet: PDTA143ES

File Size: 71368 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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About PDT0311

PDF/DataSheet Download

Datasheet: PDT0311

File Size: 158438 KB

Manufacturer: HP [Agilent(Hewlett-Packard)]

Download : Click here to Download

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PDTA143ES General Description

PNP resistor-equipped transistor in a TO-92; SOT54 plastic package.

NPN complement: PDTC143ES.

PDTA143ES Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -50 V
VCEO collector-emitter voltage open base - -50 V
VEBO emitter-base voltage open collector - -10 V
VI input voltage
positive
negative
-
-

+10
-30

V
V
IO output current (DC) - -100 mA
ICM peak collector current - -100 mA
Ptot total power dissipation Tamb 25 ; note 1 - 500 mW
Tstg storage temperature -65 150
Tj junction temperature - 150
Tamb operating ambient temperature -65 150

Note
1. Transistor mounted on an FR4 printed-circuit board.

PDTA143ES Features

` Built-in bias resistors R1 and R2 (typ. 4.7 k each)
` Simplification of circuit design
` Reduces number of components and board space.

PDTA143ES Typical Application

· Especially suitable for space reduction in interface and driver circuits
· Inverter circuit configurations without use of external resistors.

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