NE76038, NE76038-T1, NE76084 Selling Leads, Datasheet
MFG:NEC Package Cooled:N/A D/C:none
NE76038, NE76038-T1, NE76084 Datasheet download
Part Number: NE76038
MFG: NEC
Package Cooled: N/A
D/C: none
NE76038, NE76038-T1, NE76084
- Table of contents:
Info of NE76038
Info of NE76038-T1
Info of NE76084
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About NE76038
PDF/DataSheet Download
Datasheet: NE76038
File Size: 41336 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NE76038-T1
PDF/DataSheet Download
Datasheet: NE76038-T1
File Size: 41336 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NE76084
PDF/DataSheet Download
Datasheet: NE76084
File Size: 64037 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
NE76038 General Description
NE76038 is a high performance gallium arsenide metal semiconductor field effect transistor housed in a plastic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1 - 14 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. These devices feature a recessed 0.3 micron gate and triple epitaxial technology.
NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
NE76038 Maximum Ratings
|
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
|
VDS |
Drain to Supply Voltage |
V |
5 |
|
VGS |
Gate to Drain Voltage |
V |
-5 |
|
VGS |
Gate to Source Voltage |
V |
-3 |
|
IDS |
Drain Current |
mA |
IDSS |
|
PIN |
RF Input (CW) |
dBm |
+15 |
|
PT2 |
Total Power Dissipation |
mW |
240 |
|
TCH |
Channel Temperature |
°C |
150 |
|
TSTG |
Storage Temperature |
°C |
-65 to +150 |
|
RTH2, 3 |
Thermal Resistance |
°C/W |
1250 |
1. Operation in excess of any one of these parameters may result in permanent damage.
2. RTH for plastic package mounted on glass epoxy substrate is 965°C/W.
3. RTH for chip mounted on copper heat sink is 190°C/W.
NE76038 Features
• LOW NOISE FIGURE: 1.8 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz
• LG = 0.3 mm, WG = 280 mm
• LOW COST PLASTIC PACKAGING
• TAPE & REEL PACKAGING OPTION AVAILABLE
• HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz
• LG = 0.3 mm, WG = 280 mm
• LOW COST PLASTIC PACKAGING
• TAPE & REEL PACKAGING OPTION AVAILABLE
NE76084 Maximum Ratings
Drain to Source Voltage .. VDS 5.0 V
Gate to Source Voltage .. VGSO 3.0 V
Gate to Drain Voltage ... VGDO 5.0 V
Drain Current .......... ID IDSS mA
Total Power Dissipation .. Ptot 240 mW
Channel Temperature .... Tch 175
Storage Temperature ....Tstg 65 to +175
NE76084 Features
• Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz
• Gate length: Lg = 0.3 mm
• Gate width : Wg = 280 mm
• Gate length: Lg = 0.3 mm
• Gate width : Wg = 280 mm
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