NE5520379A, NE5520D1, NE5521D Selling Leads, Datasheet
MFG:NEC Package Cooled:N/A D/C:09+
NE5520379A, NE5520D1, NE5521D Datasheet download
Part Number: NE5520379A
MFG: NEC
Package Cooled: N/A
D/C: 09+
NE5520379A, NE5520D1, NE5521D
- Table of contents:
Info of NE5520379A
Info of NE5520D1
Info of NE5521D
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About NE5520379A
PDF/DataSheet Download
Datasheet: NE5520379A
File Size: 405517 KB
Manufacturer: CEL [California Eastern Labs]
Download : Click here to Download
About NE500100
PDF/DataSheet Download
Datasheet: NE500100
File Size: 40720 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NE5521D
PDF/DataSheet Download
Datasheet: NE5521D
File Size: 47817 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
NE5520379A General Description
NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function.
NE5520379A Maximum Ratings
|
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
|
VDS |
Drain Supply Voltage |
V |
15.0 |
|
VGS |
Gate Supply Voltage |
V |
5.0 |
|
ID |
Drain Current (continuous) |
A |
1.5 |
|
ID |
Drain Current (Pulse Test)2 |
A |
3.0 |
|
PT |
Total Power Dissipation |
W |
20 |
|
TCH |
Channel Temperature |
°C |
125 |
|
TSTG |
Storage Temperature |
°C |
-65 to +125 |
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Duty Cycle 50%, Ton 1 s.
NE5520379A Features
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
• HIGH OUTPUT POWER: +35.5 dBm TYP
• HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
• HIGH POWER ADDED EFFICIENCY: 65% TYP @ VDS = 3.2 V, f = 915 MHz
• SINGLE SUPPLY: 2.8 to 6.0 V
• CLASS AB OPERATION
• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
• HIGH OUTPUT POWER: +35.5 dBm TYP
• HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
• HIGH POWER ADDED EFFICIENCY: 65% TYP @ VDS = 3.2 V, f = 915 MHz
• SINGLE SUPPLY: 2.8 to 6.0 V
• CLASS AB OPERATION
• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
NE5520379A Typical Application
• DIGITAL CELLULAR PHONES: 3.2 V GSM900/DCS 1800 Dual Band Handsets
• OTHERS: Two-Way Pagers Retail Business Radio Special Mobile Radio Short Range Wireless
• OTHERS: Two-Way Pagers Retail Business Radio Special Mobile Radio Short Range Wireless
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